First-Order Magnetic Phase Transition of Mobile Electrons in Monolayer MoS2

Jonas G. Roch; Dmitry Miserev; Guillaume Froehlicher; Nadine Leisgang; Lukas Sponfeldner; Kenji Watanabe; Takashi Taniguchi; Jelena Klinovaja; Daniel Loss; Richard J. Warburton

doi:10.1103/PhysRevLett.124.187602

First-Order Magnetic Phase Transition of Mobile Electrons in Monolayer MoS2

Jonas G. Roch^*
, Dmitry Miserev
, Guillaume Froehlicher
, Nadine Leisgang
, Lukas Sponfeldner
, Kenji Watanabe
, Takashi Taniguchi
, Jelena Klinovaja
, Daniel Loss
, Richard J. Warburton

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS2. The phase boundary separates a ferromagnetic phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.

Original language	English
Article number	187602
Journal	Physical Review Letters
Volume	124
Issue number	18
DOIs	https://doi.org/10.1103/PhysRevLett.124.187602
State	Published - 8 May 2020
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2020 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the "http://creativecommons.org/licenses/by/4.0/" Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.124.187602

Cite this

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title = "First-Order Magnetic Phase Transition of Mobile Electrons in Monolayer MoS2",

abstract = "Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS2. The phase boundary separates a ferromagnetic phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.",

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AU - Roch, Jonas G.

AU - Miserev, Dmitry

AU - Froehlicher, Guillaume

AU - Leisgang, Nadine

AU - Sponfeldner, Lukas

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Klinovaja, Jelena

AU - Loss, Daniel

AU - Warburton, Richard J.

N1 - Publisher Copyright: © 2020 authors. Published by the American Physical Society. Published by the American Physical Society under the terms of the "http://creativecommons.org/licenses/by/4.0/" Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

PY - 2020/5/8

Y1 - 2020/5/8

N2 - Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS2. The phase boundary separates a ferromagnetic phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.

AB - Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS2. The phase boundary separates a ferromagnetic phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.

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ER -

First-Order Magnetic Phase Transition of Mobile Electrons in Monolayer MoS2

Abstract

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