Field-effect transistors based on single semiconducting oxide nanobelts

Michael S. Arnold; Phaedon Avouris; Zheng Wei Pan; Zhong L. Wang

doi:10.1021/jp0271054

Field-effect transistors based on single semiconducting oxide nanobelts

Michael S. Arnold, Phaedon Avouris^*, Zheng Wei Pan, Zhong L. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1150 Scopus citations

Abstract

We have fabricated field-effect transistors (FETs) based on single SnO₂ and ZnO nanobelts of thicknesses between 10 and 30 nm. Switching ratios as large as 6 orders of magnitude and conductivities as high as 15 (Ω cm)^-1 are observed. Annealing SnO₂ nanobelt FETs in an oxygen-deficient atmosphere produces a negative shift in gate threshold voltage, indicating doping by the generation of surface oxygen vacancies. This treatment provides an effective way of tuning the electrical performance of the nanobelt devices. The ability of SnO₂ FETs to act as gas sensors is also demonstrated. SnO₂ FETs with lengths of about 500 nm or less show an anomalous behavior where the conductance cannot be modulated by the gate. ZnO nanobelt FETs are sensitive to ultraviolet light. Both photogeneration of electron-hole pairs and doping by UV induced surface desorption contribute to the conductivity.

Original language	English
Pages (from-to)	659-663
Number of pages	5
Journal	Journal of Physical Chemistry B
Volume	107
Issue number	3
DOIs	https://doi.org/10.1021/jp0271054
State	Published - 23 Jan 2003
Externally published	Yes

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Surfaces, Coatings and Films
Materials Chemistry

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title = "Field-effect transistors based on single semiconducting oxide nanobelts",

abstract = "We have fabricated field-effect transistors (FETs) based on single SnO2 and ZnO nanobelts of thicknesses between 10 and 30 nm. Switching ratios as large as 6 orders of magnitude and conductivities as high as 15 (Ω cm)-1 are observed. Annealing SnO2 nanobelt FETs in an oxygen-deficient atmosphere produces a negative shift in gate threshold voltage, indicating doping by the generation of surface oxygen vacancies. This treatment provides an effective way of tuning the electrical performance of the nanobelt devices. The ability of SnO2 FETs to act as gas sensors is also demonstrated. SnO2 FETs with lengths of about 500 nm or less show an anomalous behavior where the conductance cannot be modulated by the gate. ZnO nanobelt FETs are sensitive to ultraviolet light. Both photogeneration of electron-hole pairs and doping by UV induced surface desorption contribute to the conductivity.",

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T1 - Field-effect transistors based on single semiconducting oxide nanobelts

AU - Arnold, Michael S.

AU - Avouris, Phaedon

AU - Pan, Zheng Wei

AU - Wang, Zhong L.

PY - 2003/1/23

Y1 - 2003/1/23

N2 - We have fabricated field-effect transistors (FETs) based on single SnO2 and ZnO nanobelts of thicknesses between 10 and 30 nm. Switching ratios as large as 6 orders of magnitude and conductivities as high as 15 (Ω cm)-1 are observed. Annealing SnO2 nanobelt FETs in an oxygen-deficient atmosphere produces a negative shift in gate threshold voltage, indicating doping by the generation of surface oxygen vacancies. This treatment provides an effective way of tuning the electrical performance of the nanobelt devices. The ability of SnO2 FETs to act as gas sensors is also demonstrated. SnO2 FETs with lengths of about 500 nm or less show an anomalous behavior where the conductance cannot be modulated by the gate. ZnO nanobelt FETs are sensitive to ultraviolet light. Both photogeneration of electron-hole pairs and doping by UV induced surface desorption contribute to the conductivity.

AB - We have fabricated field-effect transistors (FETs) based on single SnO2 and ZnO nanobelts of thicknesses between 10 and 30 nm. Switching ratios as large as 6 orders of magnitude and conductivities as high as 15 (Ω cm)-1 are observed. Annealing SnO2 nanobelt FETs in an oxygen-deficient atmosphere produces a negative shift in gate threshold voltage, indicating doping by the generation of surface oxygen vacancies. This treatment provides an effective way of tuning the electrical performance of the nanobelt devices. The ability of SnO2 FETs to act as gas sensors is also demonstrated. SnO2 FETs with lengths of about 500 nm or less show an anomalous behavior where the conductance cannot be modulated by the gate. ZnO nanobelt FETs are sensitive to ultraviolet light. Both photogeneration of electron-hole pairs and doping by UV induced surface desorption contribute to the conductivity.

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Field-effect transistors based on single semiconducting oxide nanobelts

Abstract

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