Ferromagnetism in ZnO nanowires derived from electro-deposition on AAO template and subsequent oxidation

J. B. Yi; H. Pan; J. Y. Lin; J. Ding; Y. P. Feng; S. Thongmee; T. Liu; H. Gong; L. Wang

doi:10.1002/adma.200702387

Ferromagnetism in ZnO nanowires derived from electro-deposition on AAO template and subsequent oxidation

J. B. Yi
, H. Pan
, J. Y. Lin
, J. Ding
, Y. P. Feng
, S. Thongmee
, T. Liu
, H. Gong
, L. Wang

Research output: Contribution to journal › Article › peer-review

146 Scopus citations

Abstract

A room-temperature ferromagnetism in ZnO nanowires derived from electro-deposition on anodic aluminum oxide (AAO) template and subsequent oxidation was reported through a controlled synthesis process. The Zn nanowires were annealed at different temperatures with a constant duration and it was found that the intensity of the peak of Zn (200) is much stronger than other peaks. The magnetization for pure Zn nanowires is found to decrease with the increase in the annealing duration and disappeared after annealing for 40 hr. It is also found that none of the point defects lead to ferromagnetism, while the room temperature ferromagnetism could be attributed to the formation of Zn nanoclusters embedded in ZnO matrix. The abnormal Hall effect (AHE) curve indicates that ZnO film with Zn clusters is an n-type magnetic semiconductor.

Original language	English
Pages (from-to)	1170-1174
Number of pages	5
Journal	Advanced Materials
Volume	20
Issue number	6
DOIs	https://doi.org/10.1002/adma.200702387
State	Published - 18 Mar 2008
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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Cite this

@article{e0d549c7bbed43c899e185420503b1fe,

title = "Ferromagnetism in ZnO nanowires derived from electro-deposition on AAO template and subsequent oxidation",

abstract = "A room-temperature ferromagnetism in ZnO nanowires derived from electro-deposition on anodic aluminum oxide (AAO) template and subsequent oxidation was reported through a controlled synthesis process. The Zn nanowires were annealed at different temperatures with a constant duration and it was found that the intensity of the peak of Zn (200) is much stronger than other peaks. The magnetization for pure Zn nanowires is found to decrease with the increase in the annealing duration and disappeared after annealing for 40 hr. It is also found that none of the point defects lead to ferromagnetism, while the room temperature ferromagnetism could be attributed to the formation of Zn nanoclusters embedded in ZnO matrix. The abnormal Hall effect (AHE) curve indicates that ZnO film with Zn clusters is an n-type magnetic semiconductor.",

author = "Yi, \{J. B.\} and H. Pan and Lin, \{J. Y.\} and J. Ding and Feng, \{Y. P.\} and S. Thongmee and T. Liu and H. Gong and L. Wang",

year = "2008",

month = mar,

day = "18",

doi = "10.1002/adma.200702387",

language = "English",

volume = "20",

pages = "1170--1174",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "6",

}

TY - JOUR

T1 - Ferromagnetism in ZnO nanowires derived from electro-deposition on AAO template and subsequent oxidation

AU - Yi, J. B.

AU - Pan, H.

AU - Lin, J. Y.

AU - Ding, J.

AU - Feng, Y. P.

AU - Thongmee, S.

AU - Liu, T.

AU - Gong, H.

AU - Wang, L.

PY - 2008/3/18

Y1 - 2008/3/18

N2 - A room-temperature ferromagnetism in ZnO nanowires derived from electro-deposition on anodic aluminum oxide (AAO) template and subsequent oxidation was reported through a controlled synthesis process. The Zn nanowires were annealed at different temperatures with a constant duration and it was found that the intensity of the peak of Zn (200) is much stronger than other peaks. The magnetization for pure Zn nanowires is found to decrease with the increase in the annealing duration and disappeared after annealing for 40 hr. It is also found that none of the point defects lead to ferromagnetism, while the room temperature ferromagnetism could be attributed to the formation of Zn nanoclusters embedded in ZnO matrix. The abnormal Hall effect (AHE) curve indicates that ZnO film with Zn clusters is an n-type magnetic semiconductor.

AB - A room-temperature ferromagnetism in ZnO nanowires derived from electro-deposition on anodic aluminum oxide (AAO) template and subsequent oxidation was reported through a controlled synthesis process. The Zn nanowires were annealed at different temperatures with a constant duration and it was found that the intensity of the peak of Zn (200) is much stronger than other peaks. The magnetization for pure Zn nanowires is found to decrease with the increase in the annealing duration and disappeared after annealing for 40 hr. It is also found that none of the point defects lead to ferromagnetism, while the room temperature ferromagnetism could be attributed to the formation of Zn nanoclusters embedded in ZnO matrix. The abnormal Hall effect (AHE) curve indicates that ZnO film with Zn clusters is an n-type magnetic semiconductor.

UR - https://www.scopus.com/pages/publications/49149118069

U2 - 10.1002/adma.200702387

DO - 10.1002/adma.200702387

M3 - Article

AN - SCOPUS:49149118069

SN - 0935-9648

VL - 20

SP - 1170

EP - 1174

JO - Advanced Materials

JF - Advanced Materials

IS - 6

ER -

Ferromagnetism in ZnO nanowires derived from electro-deposition on AAO template and subsequent oxidation

Abstract

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