Ferromagnetism and crossover of positive magnetoresistance to negative magnetoresistance in Na-doped ZnO

Yiren Wang, Xi Luo, Li Ting Tseng, Zhimin Ao, Tong Li, Guozhong Xing, Nina Bao, Kiyonori Suzukiis, Jun Ding, Sean Li, Jiabao Yi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

Na doped ZnO films were fabricated via a hydrothermal process. The films have shown room temperature ferromagnetism and p-type conductivity. Crossover of positive to negative magnetoresistance has been observed with the variation of Na doping concentrations. The positive MR is due to p-p exchange interaction induced Zeeman splitting to suppress the hopping path of holes. The ferromagnetism is attributed to the formation of a Zn vacancy complex. The negative magnetoresistance is due to the minimization of spin-dependent scattering by the applied magnetic field.

Original languageEnglish
Pages (from-to)1285-1291
Number of pages7
JournalChemistry of Materials
Volume27
Issue number4
DOIs
StatePublished - 24 Feb 2015
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.

ASJC Scopus subject areas

  • General Chemistry
  • General Chemical Engineering
  • Materials Chemistry

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