Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

Rizwan Ur Rehman Sagar; Min Zhang; Xiaohao Wang; Babar Shabbir; Florian J. Stadler

doi:10.1016/j.nanoms.2020.01.002

Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

Rizwan Ur Rehman Sagar^*, Min Zhang^*, Xiaohao Wang, Babar Shabbir, Florian J. Stadler^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance ~ 100% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of ~158% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.

Original language	English
Pages (from-to)	346-352
Number of pages	7
Journal	Nano Materials Science
Volume	2
Issue number	4
DOIs	https://doi.org/10.1016/j.nanoms.2020.01.002
State	Published - Dec 2020
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2020 Chongqing University

Keywords

Defects
Graphene foam
Magnetoresistance
Porosity
Surface area

ASJC Scopus subject areas

Chemical Engineering (miscellaneous)
Materials Science (miscellaneous)
Mechanics of Materials

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10.1016/j.nanoms.2020.01.002

Cite this

@article{39527cafb4d343e085f78c416a330eb6,

title = "Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring",

abstract = "Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance \textasciitilde{} 100\% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of \textasciitilde{}158\% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.",

keywords = "Defects, Graphene foam, Magnetoresistance, Porosity, Surface area",

author = "\{Rehman Sagar\}, \{Rizwan Ur\} and Min Zhang and Xiaohao Wang and Babar Shabbir and Stadler, \{Florian J.\}",

note = "Publisher Copyright: {\textcopyright} 2020 Chongqing University",

year = "2020",

month = dec,

doi = "10.1016/j.nanoms.2020.01.002",

language = "English",

volume = "2",

pages = "346--352",

journal = "Nano Materials Science",

issn = "2096-6482",

publisher = "KeAi Communications Co.",

number = "4",

}

TY - JOUR

T1 - Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

AU - Rehman Sagar, Rizwan Ur

AU - Zhang, Min

AU - Wang, Xiaohao

AU - Shabbir, Babar

AU - Stadler, Florian J.

PY - 2020/12

Y1 - 2020/12

N2 - Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance ~ 100% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of ~158% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.

AB - Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large, linear and unsaturated room temperature magnetoresistance. However, the magnetoresistance of graphene foam is not as large as that of monolayer graphene. Herein, we describe how magnetoresistance ~ 100% was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene; the highest magnetoresistance of ~158% was detected at 5 K under a magnetic field of 5 T. Unlike monolayer graphene, graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.

KW - Defects

KW - Graphene foam

KW - Magnetoresistance

KW - Porosity

KW - Surface area

UR - https://www.scopus.com/pages/publications/85108297120

U2 - 10.1016/j.nanoms.2020.01.002

DO - 10.1016/j.nanoms.2020.01.002

M3 - Article

AN - SCOPUS:85108297120

SN - 2096-6482

VL - 2

SP - 346

EP - 352

JO - Nano Materials Science

JF - Nano Materials Science

IS - 4

ER -

Facile magnetoresistance adjustment of graphene foam for magnetic sensor applications through microstructure tailoring

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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