Fabrication and transport properties of Te-doped Bi nanowire arrays

Y. M. Lin; X. Sun; S. B. Cronin; Z. Zhang; J. Y. Ying; M. S. Dresselhaus

Fabrication and transport properties of Te-doped Bi nanowire arrays

Y. M. Lin^*, X. Sun, S. B. Cronin, Z. Zhang, J. Y. Ying, M. S. Dresselhaus

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Te-doped Bi nanowires with a 40 nm wire diameter have been successfully synthesized in anodic alumina templates by the pressure injection technique. Due to the unique semimetal-semiconductor transition that occurs in Bi nanowires, these systems exhibit a rather different temperature dependence in transport properties from their bulk counterparts. An improved theoretical model of this unique ID nanowire system is developed based on the band structure of bulk bismuth. The temperature dependence of resistance for Bi nanowire arrays have been studied experimentally for various Te dopant concentrations and the results are compared with theoretical predictions.

Original language	English
Pages (from-to)	H10.3.1-H10.3.6
Journal	Materials Research Society Symposium - Proceedings
Volume	582
State	Published - 2000
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Fabrication and transport properties of Te-doped Bi nanowire arrays",

abstract = "Te-doped Bi nanowires with a 40 nm wire diameter have been successfully synthesized in anodic alumina templates by the pressure injection technique. Due to the unique semimetal-semiconductor transition that occurs in Bi nanowires, these systems exhibit a rather different temperature dependence in transport properties from their bulk counterparts. An improved theoretical model of this unique ID nanowire system is developed based on the band structure of bulk bismuth. The temperature dependence of resistance for Bi nanowire arrays have been studied experimentally for various Te dopant concentrations and the results are compared with theoretical predictions.",

author = "Lin, \{Y. M.\} and X. Sun and Cronin, \{S. B.\} and Z. Zhang and Ying, \{J. Y.\} and Dresselhaus, \{M. S.\}",

year = "2000",

language = "English",

volume = "582",

pages = "H10.3.1--H10.3.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Fabrication and transport properties of Te-doped Bi nanowire arrays

AU - Lin, Y. M.

AU - Sun, X.

AU - Cronin, S. B.

AU - Zhang, Z.

AU - Ying, J. Y.

AU - Dresselhaus, M. S.

PY - 2000

Y1 - 2000

N2 - Te-doped Bi nanowires with a 40 nm wire diameter have been successfully synthesized in anodic alumina templates by the pressure injection technique. Due to the unique semimetal-semiconductor transition that occurs in Bi nanowires, these systems exhibit a rather different temperature dependence in transport properties from their bulk counterparts. An improved theoretical model of this unique ID nanowire system is developed based on the band structure of bulk bismuth. The temperature dependence of resistance for Bi nanowire arrays have been studied experimentally for various Te dopant concentrations and the results are compared with theoretical predictions.

AB - Te-doped Bi nanowires with a 40 nm wire diameter have been successfully synthesized in anodic alumina templates by the pressure injection technique. Due to the unique semimetal-semiconductor transition that occurs in Bi nanowires, these systems exhibit a rather different temperature dependence in transport properties from their bulk counterparts. An improved theoretical model of this unique ID nanowire system is developed based on the band structure of bulk bismuth. The temperature dependence of resistance for Bi nanowire arrays have been studied experimentally for various Te dopant concentrations and the results are compared with theoretical predictions.

UR - https://www.scopus.com/pages/publications/33751126774

M3 - Article

AN - SCOPUS:33751126774

SN - 0272-9172

VL - 582

SP - H10.3.1-H10.3.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Fabrication and transport properties of Te-doped Bi nanowire arrays

Abstract

ASJC Scopus subject areas

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