Fabrication and transport properties of Te-doped Bi nanowire arrays

Y. M. Lin; X. Sun; S. B. Cronin; Z. Zhang; J. Y. Ying; M. S. Dresselhaus

Fabrication and transport properties of Te-doped Bi nanowire arrays

Y. M. Lin^*
, X. Sun
, S. B. Cronin
, Z. Zhang
, J. Y. Ying
, M. S. Dresselhaus

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Te-doped Bi nanowires with a 40 nm wire diameter have been successfully synthesized in anodic alumina templates by the pressure injection technique. Due to the unique semimetal-semiconductor transition that occurs in Bi nanowires, these systems exhibit a rather different temperature dependence in transport properties from their bulk counterparts. An improved theoretical model of this unique 1D nanowire system is developed based on the band structure of bulk bismuth. The temperature dependence of resistance for Bi nanowire arrays have been studied experimentally for various Te dopant concentrations and the results are compared with theoretical predictions.

Original language	English
Pages (from-to)	H1031-H1036
Journal	Materials Research Society Symposium - Proceedings
Volume	582
State	Published - 2001
Externally published	Yes
Event	Molecular Electronics - Boston, MA, United States Duration: 29 Nov 1999 → 2 Dec 1999

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Fabrication and transport properties of Te-doped Bi nanowire arrays",

abstract = "Te-doped Bi nanowires with a 40 nm wire diameter have been successfully synthesized in anodic alumina templates by the pressure injection technique. Due to the unique semimetal-semiconductor transition that occurs in Bi nanowires, these systems exhibit a rather different temperature dependence in transport properties from their bulk counterparts. An improved theoretical model of this unique 1D nanowire system is developed based on the band structure of bulk bismuth. The temperature dependence of resistance for Bi nanowire arrays have been studied experimentally for various Te dopant concentrations and the results are compared with theoretical predictions.",

author = "Lin, \{Y. M.\} and X. Sun and Cronin, \{S. B.\} and Z. Zhang and Ying, \{J. Y.\} and Dresselhaus, \{M. S.\}",

year = "2001",

language = "English",

volume = "582",

pages = "H1031--H1036",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Molecular Electronics ; Conference date: 29-11-1999 Through 02-12-1999",

}

TY - JOUR

T1 - Fabrication and transport properties of Te-doped Bi nanowire arrays

AU - Lin, Y. M.

AU - Sun, X.

AU - Cronin, S. B.

AU - Zhang, Z.

AU - Ying, J. Y.

AU - Dresselhaus, M. S.

PY - 2001

Y1 - 2001

N2 - Te-doped Bi nanowires with a 40 nm wire diameter have been successfully synthesized in anodic alumina templates by the pressure injection technique. Due to the unique semimetal-semiconductor transition that occurs in Bi nanowires, these systems exhibit a rather different temperature dependence in transport properties from their bulk counterparts. An improved theoretical model of this unique 1D nanowire system is developed based on the band structure of bulk bismuth. The temperature dependence of resistance for Bi nanowire arrays have been studied experimentally for various Te dopant concentrations and the results are compared with theoretical predictions.

AB - Te-doped Bi nanowires with a 40 nm wire diameter have been successfully synthesized in anodic alumina templates by the pressure injection technique. Due to the unique semimetal-semiconductor transition that occurs in Bi nanowires, these systems exhibit a rather different temperature dependence in transport properties from their bulk counterparts. An improved theoretical model of this unique 1D nanowire system is developed based on the band structure of bulk bismuth. The temperature dependence of resistance for Bi nanowire arrays have been studied experimentally for various Te dopant concentrations and the results are compared with theoretical predictions.

UR - https://www.scopus.com/pages/publications/0035045373

M3 - Conference article

AN - SCOPUS:0035045373

SN - 0272-9172

VL - 582

SP - H1031-H1036

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Molecular Electronics

Y2 - 29 November 1999 through 2 December 1999

ER -

Fabrication and transport properties of Te-doped Bi nanowire arrays

Abstract

ASJC Scopus subject areas

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