Fabrication and optical modulation of top-emitting yellow light polymer light-emitting diodes on the FR4 board

Haichuan Mu; Indrani Reddy; John Hunt; Phillip Severs; Shirish Patil

doi:10.1016/j.tsf.2010.08.137

Fabrication and optical modulation of top-emitting yellow light polymer light-emitting diodes on the FR4 board

Haichuan Mu^*, Indrani Reddy, John Hunt, Phillip Severs, Shirish Patil

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Top-emitting yellow light polymer light-emitting diodes (PLEDs) were fabricated on the FR4 board for future application in optical interconnects. A 100 μm thick glass plate with sputtered Ag films on the back side for light reflection was bonded to the board for smooth surface. The PLED had a structure of indium tin oxide /poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate)/ phenyl substituted polypa raphenylene-vinylene/Ba/Ag and reached the brightness of 4528 cd/m² with a corresponding current efficiency of 7 cd/A. A small AC signal imposed onto a DC bias was employed to characterize the electroluminescence delay time and hole mobility in the PDY-132 super yellow films.

Original language	English
Pages (from-to)	841-845
Number of pages	5
Journal	Thin Solid Films
Volume	519
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2010.08.137
State	Published - 1 Nov 2010
Externally published	Yes

Bibliographical note

Funding Information:
The authors are grateful for the financial support of the Defense Advanced Research Projects Agency (DARPA) (Grant number G00005349 , Award number N66001-08-C-2084).

Keywords

Mobility
Optical modulation
Polymer light emitting diodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2010.08.137

Cite this

@article{03f481948fc644fb84d51d7423de0864,

title = "Fabrication and optical modulation of top-emitting yellow light polymer light-emitting diodes on the FR4 board",

abstract = "Top-emitting yellow light polymer light-emitting diodes (PLEDs) were fabricated on the FR4 board for future application in optical interconnects. A 100 μm thick glass plate with sputtered Ag films on the back side for light reflection was bonded to the board for smooth surface. The PLED had a structure of indium tin oxide /poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate)/ phenyl substituted polypa raphenylene-vinylene/Ba/Ag and reached the brightness of 4528 cd/m2 with a corresponding current efficiency of 7 cd/A. A small AC signal imposed onto a DC bias was employed to characterize the electroluminescence delay time and hole mobility in the PDY-132 super yellow films.",

keywords = "Mobility, Optical modulation, Polymer light emitting diodes",

author = "Haichuan Mu and Indrani Reddy and John Hunt and Phillip Severs and Shirish Patil",

note = "Funding Information: The authors are grateful for the financial support of the Defense Advanced Research Projects Agency (DARPA) (Grant number G00005349 , Award number N66001-08-C-2084).",

year = "2010",

month = nov,

day = "1",

doi = "10.1016/j.tsf.2010.08.137",

language = "English",

volume = "519",

pages = "841--845",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Fabrication and optical modulation of top-emitting yellow light polymer light-emitting diodes on the FR4 board

AU - Mu, Haichuan

AU - Reddy, Indrani

AU - Hunt, John

AU - Severs, Phillip

AU - Patil, Shirish

N1 - Funding Information: The authors are grateful for the financial support of the Defense Advanced Research Projects Agency (DARPA) (Grant number G00005349 , Award number N66001-08-C-2084).

PY - 2010/11/1

Y1 - 2010/11/1

N2 - Top-emitting yellow light polymer light-emitting diodes (PLEDs) were fabricated on the FR4 board for future application in optical interconnects. A 100 μm thick glass plate with sputtered Ag films on the back side for light reflection was bonded to the board for smooth surface. The PLED had a structure of indium tin oxide /poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate)/ phenyl substituted polypa raphenylene-vinylene/Ba/Ag and reached the brightness of 4528 cd/m2 with a corresponding current efficiency of 7 cd/A. A small AC signal imposed onto a DC bias was employed to characterize the electroluminescence delay time and hole mobility in the PDY-132 super yellow films.

AB - Top-emitting yellow light polymer light-emitting diodes (PLEDs) were fabricated on the FR4 board for future application in optical interconnects. A 100 μm thick glass plate with sputtered Ag films on the back side for light reflection was bonded to the board for smooth surface. The PLED had a structure of indium tin oxide /poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate)/ phenyl substituted polypa raphenylene-vinylene/Ba/Ag and reached the brightness of 4528 cd/m2 with a corresponding current efficiency of 7 cd/A. A small AC signal imposed onto a DC bias was employed to characterize the electroluminescence delay time and hole mobility in the PDY-132 super yellow films.

KW - Mobility

KW - Optical modulation

KW - Polymer light emitting diodes

UR - https://www.scopus.com/pages/publications/77958513570

U2 - 10.1016/j.tsf.2010.08.137

DO - 10.1016/j.tsf.2010.08.137

M3 - Article

AN - SCOPUS:77958513570

SN - 0040-6090

VL - 519

SP - 841

EP - 845

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

Fabrication and optical modulation of top-emitting yellow light polymer light-emitting diodes on the FR4 board

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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