Abstract
Copper Oxide film of monoclinic phase was deposited on silicon substrate by DC magnetron sputtering. A metal-semiconductor-metal (MSM) photodetector was fabricated by developing two interdigitated Ni electrodes on the film. The current-voltage characteristics of Ni/CuO/Ni device revealed Schottky contact formation which was attributed to Fermi-level pinning at the metal-semiconductor interface. The photo-response of the device was recorded by exposing it to the light of different wavelengths (850, 505, 405 and 365 nm). The results showed a significant increase in current under 505 nm light exposure. The Schottky barrier height was reduced after exposing the device to light.
| Original language | English |
|---|---|
| Pages (from-to) | 530-537 |
| Number of pages | 8 |
| Journal | Journal of Optoelectronics and Advanced Materials |
| Volume | 23 |
| Issue number | 11-12 |
| State | Published - Nov 2021 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2021 National Institute of Optoelectronics. All rights reserved.
Keywords
- Copper oxide
- MSM photodiode
- Response time
- Sensitivity
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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