We report on a suspension technique for Al doubly clamped beams. The technique is based on two consecutive reactive ion etching processes in CF4 plasma, anisotropic and isotropic, of SiOx on which Al layer is deposited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a magnetomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrication of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.
|Number of pages||5|
|Journal||Applied Physics A: Materials Science and Processing|
|State||Published - Jul 2012|
Bibliographical noteFunding Information:
This work was supported by the JSPS through its FIRST Program and MEXT kakenhi “Quantum Cybernetics”. K.H. gratefully acknowledges the support of the King Fahd University of Petroleum and Minerals, Saudi Arabia, under the FT100009 DSR project.
ASJC Scopus subject areas
- Chemistry (all)
- Materials Science (all)