Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices

K. Harrabi; Y. A. Pashkin; O. V. Astafiev; S. Kafanov; T. F. Li; J. S. Tsai

doi:10.1007/s00339-012-6981-8

Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices

K. Harrabi^*, Y. A. Pashkin, O. V. Astafiev, S. Kafanov, T. F. Li, J. S. Tsai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report on a suspension technique for Al doubly clamped beams. The technique is based on two consecutive reactive ion etching processes in CF4 plasma, anisotropic and isotropic, of SiOx on which Al layer is deposited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a magnetomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrication of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.

Original language	English
Pages (from-to)	7-11
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	108
Issue number	1
DOIs	https://doi.org/10.1007/s00339-012-6981-8
State	Published - Jul 2012

Bibliographical note

Funding Information:
This work was supported by the JSPS through its FIRST Program and MEXT kakenhi “Quantum Cybernetics”. K.H. gratefully acknowledges the support of the King Fahd University of Petroleum and Minerals, Saudi Arabia, under the FT100009 DSR project.

ASJC Scopus subject areas

General Chemistry
General Materials Science

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abstract = "We report on a suspension technique for Al doubly clamped beams. The technique is based on two consecutive reactive ion etching processes in CF4 plasma, anisotropic and isotropic, of SiOx on which Al layer is deposited. With this technique, Al doubly clamped beams were fabricated. One of the beams was characterized using a magnetomotive measurement scheme at low temperatures. The developed suspension technique is suitable for the fabrication of Al nanoelectronic devices with a mechanical degree of freedom, in particular, superconducting flux qubits with partly suspended loops.",

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AU - Pashkin, Y. A.

AU - Astafiev, O. V.

AU - Kafanov, S.

AU - Li, T. F.

AU - Tsai, J. S.

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Fabrication and characterization of Al nanomechanical resonators for coupling to nanoelectronic devices

Abstract

Bibliographical note

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