Extremely wide lasing bandwidth from InAs/InP quantumdash ridge-waveguide laser near 1.6 μm

M. Z.M. Khan, Tien K. Ng, C. S. Lee, P. Bhattacharya, Boon S. Ooi*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate an ultra-broad lasing bandwidth (-3dB) of > 50 nm utilizing InAs/InGaAlAs/InP quantum-dash ridge-waveguide laser using chirped AlGaInAs barrier layer thickness. Our device exhibits a recorded bandwidth and significant improvement of laser characteristics.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2013
PagesCTh4G.6
StatePublished - 2013
Externally publishedYes

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2013

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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