Extraction of diode parameters of silicon solar cells under high illumination conditions

Firoz Khan; Seong Ho Baek; Yiseul Park; Jae Hyun Kim

doi:10.1016/j.enconman.2013.07.054

Extraction of diode parameters of silicon solar cells under high illumination conditions

Firoz Khan
, Seong Ho Baek
, Yiseul Park
, Jae Hyun Kim^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

102 Scopus citations

Abstract

An analytical method has been developed to extract all four diode parameters, namely the shunt resistance, series resistance, diode ideality factor, and reverse saturation current density, using a single J-V curve, based on one exponential model of silicon solar cells under high illumination conditions. The slope of the J-V curve (dV/dJ) at a short circuit condition is used to determine the value of the shunt resistance. The slope of the J-V curve at an open circuit condition together with the short circuit current density, open circuit voltage, current density, and voltage at maximum power point have been used to determine the values of the series resistance, diode ideality factor, and reverse saturation current density. The determined values of the diode parameters have been used to compute the theoretical values of the open circuit voltage, curve factor, and efficiency of the solar cell. The theoretical J-V curves matched well with the corresponding experimental curves. This method is applied to determine the diode parameters of concentrator silicon solar cells at different illumination conditions in a temperature range of 298-323 K. The computed values of the open circuit voltage, curve factor, and efficiency obtained using diode parameters determined with this method showed good agreement (<2% discrepancy) with the experimental values.

Original language	English
Pages (from-to)	421-429
Number of pages	9
Journal	Energy Conversion and Management
Volume	76
DOIs	https://doi.org/10.1016/j.enconman.2013.07.054
State	Published - 2013
Externally published	Yes

Bibliographical note

Funding Information:
This work was financially supported by the Pioneer Research Center Program through the National Research Foundation of Korea (2011-0001649) by the Ministry of Education, Science and Technology (MEST) and partially funded by the Energy International Collaboration Research & Development Program of the Ministry of Knowledge Economy (MKE) (2011-8520010050).

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Concentrator solar cells
Diode parameters
High illumination conditions
Intensity of illumination
Single diode model

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Nuclear Energy and Engineering
Fuel Technology
Energy Engineering and Power Technology

Access to Document

10.1016/j.enconman.2013.07.054

Cite this

@article{b3e24e12726f45518bc20ea783dfc783,

title = "Extraction of diode parameters of silicon solar cells under high illumination conditions",

abstract = "An analytical method has been developed to extract all four diode parameters, namely the shunt resistance, series resistance, diode ideality factor, and reverse saturation current density, using a single J-V curve, based on one exponential model of silicon solar cells under high illumination conditions. The slope of the J-V curve (dV/dJ) at a short circuit condition is used to determine the value of the shunt resistance. The slope of the J-V curve at an open circuit condition together with the short circuit current density, open circuit voltage, current density, and voltage at maximum power point have been used to determine the values of the series resistance, diode ideality factor, and reverse saturation current density. The determined values of the diode parameters have been used to compute the theoretical values of the open circuit voltage, curve factor, and efficiency of the solar cell. The theoretical J-V curves matched well with the corresponding experimental curves. This method is applied to determine the diode parameters of concentrator silicon solar cells at different illumination conditions in a temperature range of 298-323 K. The computed values of the open circuit voltage, curve factor, and efficiency obtained using diode parameters determined with this method showed good agreement (<2\% discrepancy) with the experimental values.",

keywords = "Concentrator solar cells, Diode parameters, High illumination conditions, Intensity of illumination, Single diode model",

author = "Firoz Khan and Baek, \{Seong Ho\} and Yiseul Park and Kim, \{Jae Hyun\}",

note = "Funding Information: This work was financially supported by the Pioneer Research Center Program through the National Research Foundation of Korea (2011-0001649) by the Ministry of Education, Science and Technology (MEST) and partially funded by the Energy International Collaboration Research \& Development Program of the Ministry of Knowledge Economy (MKE) (2011-8520010050).",

year = "2013",

doi = "10.1016/j.enconman.2013.07.054",

language = "English",

volume = "76",

pages = "421--429",

}

TY - JOUR

T1 - Extraction of diode parameters of silicon solar cells under high illumination conditions

AU - Khan, Firoz

AU - Baek, Seong Ho

AU - Park, Yiseul

AU - Kim, Jae Hyun

N1 - Funding Information: This work was financially supported by the Pioneer Research Center Program through the National Research Foundation of Korea (2011-0001649) by the Ministry of Education, Science and Technology (MEST) and partially funded by the Energy International Collaboration Research & Development Program of the Ministry of Knowledge Economy (MKE) (2011-8520010050).

PY - 2013

Y1 - 2013

N2 - An analytical method has been developed to extract all four diode parameters, namely the shunt resistance, series resistance, diode ideality factor, and reverse saturation current density, using a single J-V curve, based on one exponential model of silicon solar cells under high illumination conditions. The slope of the J-V curve (dV/dJ) at a short circuit condition is used to determine the value of the shunt resistance. The slope of the J-V curve at an open circuit condition together with the short circuit current density, open circuit voltage, current density, and voltage at maximum power point have been used to determine the values of the series resistance, diode ideality factor, and reverse saturation current density. The determined values of the diode parameters have been used to compute the theoretical values of the open circuit voltage, curve factor, and efficiency of the solar cell. The theoretical J-V curves matched well with the corresponding experimental curves. This method is applied to determine the diode parameters of concentrator silicon solar cells at different illumination conditions in a temperature range of 298-323 K. The computed values of the open circuit voltage, curve factor, and efficiency obtained using diode parameters determined with this method showed good agreement (<2% discrepancy) with the experimental values.

AB - An analytical method has been developed to extract all four diode parameters, namely the shunt resistance, series resistance, diode ideality factor, and reverse saturation current density, using a single J-V curve, based on one exponential model of silicon solar cells under high illumination conditions. The slope of the J-V curve (dV/dJ) at a short circuit condition is used to determine the value of the shunt resistance. The slope of the J-V curve at an open circuit condition together with the short circuit current density, open circuit voltage, current density, and voltage at maximum power point have been used to determine the values of the series resistance, diode ideality factor, and reverse saturation current density. The determined values of the diode parameters have been used to compute the theoretical values of the open circuit voltage, curve factor, and efficiency of the solar cell. The theoretical J-V curves matched well with the corresponding experimental curves. This method is applied to determine the diode parameters of concentrator silicon solar cells at different illumination conditions in a temperature range of 298-323 K. The computed values of the open circuit voltage, curve factor, and efficiency obtained using diode parameters determined with this method showed good agreement (<2% discrepancy) with the experimental values.

KW - Concentrator solar cells

KW - Diode parameters

KW - High illumination conditions

KW - Intensity of illumination

KW - Single diode model

UR - https://www.scopus.com/pages/publications/84883271068

U2 - 10.1016/j.enconman.2013.07.054

DO - 10.1016/j.enconman.2013.07.054

M3 - Article

AN - SCOPUS:84883271068

SN - 0196-8904

VL - 76

SP - 421

EP - 429

JO - Energy Conversion and Management

JF - Energy Conversion and Management

ER -

Extraction of diode parameters of silicon solar cells under high illumination conditions

Abstract

Bibliographical note

UN SDGs

Keywords

ASJC Scopus subject areas

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