Examination of Thermoelectric Power of the CuInGaSe₂ Crystals

Within the temperature range 186–424 K, the rate of change in the thermoelectric power as a function of temperature of the CuInGaSe2 compound is measured. The CuInGaSe2 compound was crystallised using a modified Bridgman process. According to measurements, the crystals’ conductivity was p-type. The relationship between thermoelectric power, charge carrier concentration, and electrical conductivity was investigated. Several physical characteristics, including mobilities, diffusion coefficients, diffusion lengths, effective masses, and carrier relaxation times, were determined using the experimental data. These characteristics reveal the semiconductor’s overall behaviour. Our results show that as-grown CuInGaSe2 crystals are generally p-type and can be potential candidates for thermoelectric power generation.