Examination of Thermoelectric Power of the CuInGaSe2 Crystals

A. Salem*, K. Alshehri, J. A. Mohammed Abdulwahed, S. A. Hussein

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Within the temperature range 186–424 K, the rate of change in the thermoelectric power as a function of temperature of the CuInGaSe2 compound is measured. The CuInGaSe2 compound was crystallised using a modified Bridgman process. According to measurements, the crystals’ conductivity was p-type. The relationship between thermoelectric power, charge carrier concentration, and electrical conductivity was investigated. Several physical characteristics, including mobilities, diffusion coefficients, diffusion lengths, effective masses, and carrier relaxation times, were determined using the experimental data. These characteristics reveal the semiconductor’s overall behaviour. Our results show that as-grown CuInGaSe2 crystals are generally p-type and can be potential candidates for thermoelectric power generation.

Original languageEnglish
Pages (from-to)211-215
Number of pages5
JournalActa Physica Polonica A
Volume142
Issue number2
DOIs
StatePublished - Aug 2022
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2022 Polish Academy of Sciences. All rights reserved.

Keywords

  • characterization of semiconducting quaternary compounds
  • crystals
  • topics: CuInGaSe2 (CIGS)

ASJC Scopus subject areas

  • General Physics and Astronomy

Fingerprint

Dive into the research topics of 'Examination of Thermoelectric Power of the CuInGaSe2 Crystals'. Together they form a unique fingerprint.

Cite this