Enhancement of room temperature ferromagnetism in C-doped ZnO films by nitrogen codoping

J. B. Yi; L. Shen; H. Pan; L. H. Van; S. Thongmee; J. F. Hu; Y. W. Ma; J. Ding; Y. P. Feng

doi:10.1063/1.3073943

Enhancement of room temperature ferromagnetism in C-doped ZnO films by nitrogen codoping

J. B. Yi
, L. Shen
, H. Pan
, L. H. Van
, S. Thongmee
, J. F. Hu
, Y. W. Ma
, J. Ding
, Y. P. Feng

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

The effect of nitrogen on the magnetic properties of C-doped ZnO has been investigated. It has been found that a low concentration of N doping does not lead to an apparent change of the magnetization in C-doped ZnO films. When N doping concentration exceeds 0.05 at. %, the magnetization of C-ZnO films increases significantly (more than 85%). The increased magnetization is mainly due to the enhanced moment of carbon, resulted from N doping. The successful fabrication of p -type diluted magnetic semiconductor may be of interest for spintronic applications.

Original language	English
Article number	07C513
Journal	Journal of Applied Physics
Volume	105
Issue number	7
DOIs	https://doi.org/10.1063/1.3073943
State	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3073943

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title = "Enhancement of room temperature ferromagnetism in C-doped ZnO films by nitrogen codoping",

abstract = "The effect of nitrogen on the magnetic properties of C-doped ZnO has been investigated. It has been found that a low concentration of N doping does not lead to an apparent change of the magnetization in C-doped ZnO films. When N doping concentration exceeds 0.05 at. \%, the magnetization of C-ZnO films increases significantly (more than 85\%). The increased magnetization is mainly due to the enhanced moment of carbon, resulted from N doping. The successful fabrication of p -type diluted magnetic semiconductor may be of interest for spintronic applications.",

author = "Yi, \{J. B.\} and L. Shen and H. Pan and Van, \{L. H.\} and S. Thongmee and Hu, \{J. F.\} and Ma, \{Y. W.\} and J. Ding and Feng, \{Y. P.\}",

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T1 - Enhancement of room temperature ferromagnetism in C-doped ZnO films by nitrogen codoping

AU - Yi, J. B.

AU - Shen, L.

AU - Pan, H.

AU - Van, L. H.

AU - Thongmee, S.

AU - Hu, J. F.

AU - Ma, Y. W.

AU - Ding, J.

AU - Feng, Y. P.

PY - 2009

Y1 - 2009

N2 - The effect of nitrogen on the magnetic properties of C-doped ZnO has been investigated. It has been found that a low concentration of N doping does not lead to an apparent change of the magnetization in C-doped ZnO films. When N doping concentration exceeds 0.05 at. %, the magnetization of C-ZnO films increases significantly (more than 85%). The increased magnetization is mainly due to the enhanced moment of carbon, resulted from N doping. The successful fabrication of p -type diluted magnetic semiconductor may be of interest for spintronic applications.

AB - The effect of nitrogen on the magnetic properties of C-doped ZnO has been investigated. It has been found that a low concentration of N doping does not lead to an apparent change of the magnetization in C-doped ZnO films. When N doping concentration exceeds 0.05 at. %, the magnetization of C-ZnO films increases significantly (more than 85%). The increased magnetization is mainly due to the enhanced moment of carbon, resulted from N doping. The successful fabrication of p -type diluted magnetic semiconductor may be of interest for spintronic applications.

UR - https://www.scopus.com/pages/publications/65249084690

U2 - 10.1063/1.3073943

DO - 10.1063/1.3073943

M3 - Article

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VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 07C513

ER -

Enhancement of room temperature ferromagnetism in C-doped ZnO films by nitrogen codoping

Abstract

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