Abstract
Following the success of graphene which possesses unique and superior properties, 2D material other than graphene become centre of interest of material scientists.Silicene, which has the same crystal structure as graphene but consist of silicon atoms rather than carbon become intriguing material due to domination of silicon as main material of electronic component. It is common to enhance electronic properties of semiconductor by adding dopant atoms. The electronic properties of Silicene doped with Gallium are investigated using first principle calculation based on density functional theory (DFT).Ga doping changes character of silicene from semimetal to conductor except silicene with Ga doping on S-site (Ga atom substitutes one Si atom) which lead to semiconductor.
| Original language | English |
|---|---|
| Article number | 03003 |
| Journal | MATEC Web of Conferences |
| Volume | 30 |
| DOIs | |
| State | Published - 4 Nov 2015 |
| Externally published | Yes |
| Event | 4th International Conference on Material Science and Engineering Technology, ICMSET 2015 - Singapore, Singapore Duration: 26 Oct 2015 → 28 Oct 2015 |
Bibliographical note
Publisher Copyright:© Owned by the authors, published by EDP Sciences, 2015.
ASJC Scopus subject areas
- General Chemistry
- General Materials Science
- General Engineering
Fingerprint
Dive into the research topics of 'Electronic structures of Silicene doped with galium: First principle study'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver