Electronic phase transition in CrN thin films grown by reactive RF magnetron sputtering

Khan Alam*, Mohammad B. Haider, Mohammad F. Al-Kuhaili, Khalil A. Ziq, Bakhtiar Ul Haq

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Chromium nitride thin films were prepared by reactive radio frequency magnetron sputtering on glass and Si(001) substrates. Thin films were grown at different nitrogen to argon flow rate ratio and their effect on the film composition, band gap and electronic phase transition was studied by different experimental technique. X-ray diffraction analyses establish that CrN films predominantly grow in [111]CrN and [002]CrN directions irrespective of the substrates used for the growths. The band gap was found to vary with the composition of the films. All films are semiconducting at room temperature and show discontinuity in their resistivity versus temperature curve indicating electronic transition. But the low temperature electronic phase depends on the growth conditions and composition of the films.

Original languageEnglish
Pages (from-to)17352-17358
Number of pages7
JournalCeramics International
Volume48
Issue number12
DOIs
StatePublished - 15 Jun 2022

Bibliographical note

Publisher Copyright:
© 2022 Elsevier Ltd and Techna Group S.r.l.

Keywords

  • Chromium nitride
  • Electronic phase transition
  • Nitride thin films
  • RF-sputtering
  • Scanning electron microscopy
  • X-ray diffraction
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

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