Electronic and thermoelectric properties of atomically thin C3Si3/C and C3Ge3/C superlattices

Muhammad Ali; Xiaodong Pi; Yong Liu; Deren Yang

doi:10.1088/1361-6528/aa9ebb

Electronic and thermoelectric properties of atomically thin C₃Si₃/C and C₃Ge₃/C superlattices

Muhammad Ali
, Xiaodong Pi
, Yong Liu
, Deren Yang

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The nanostructuring of graphene into superlattices offers the possibility of tuning both the electronic and thermal properties of graphene. Using classical and quantum mechanical calculations, we have investigated the electronic and thermoelectric properties of the atomically thin superlattice of C₃Si₃/C (C₃Ge₃/C) formed by the incorporation of Si (Ge) atoms into graphene. The bandgap and phonon thermal conductivity of C₃Si₃/C (C₃Ge₃/C) are 0.54 (0.51) eV and 15.48 (12.64) W m^-1 K^-1, respectively, while the carrier mobility of C₃Si₃/C (C₃Ge₃/C) is 1.285 ×10⁵ (1.311 ×10⁵) cm² V^-1 s^-1 at 300 K. The thermoelectric figure of merit for C₃Si₃/C (C₃Ge₃/C) can be optimized via the tuning of carrier concentration to obtain the prominent ZT value of 1.95 (2.72).

Original language	English
Article number	045402
Journal	Nanotechnology
Volume	29
Issue number	4
DOIs	https://doi.org/10.1088/1361-6528/aa9ebb
State	Published - 26 Jan 2018
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2017 IOP Publishing Ltd.

Keywords

bandgap
carrier mobility
superlattices
thermoelectric coefficients

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1088/1361-6528/aa9ebb

Cite this

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title = "Electronic and thermoelectric properties of atomically thin C3Si3/C and C3Ge3/C superlattices",

abstract = "The nanostructuring of graphene into superlattices offers the possibility of tuning both the electronic and thermal properties of graphene. Using classical and quantum mechanical calculations, we have investigated the electronic and thermoelectric properties of the atomically thin superlattice of C3Si3/C (C3Ge3/C) formed by the incorporation of Si (Ge) atoms into graphene. The bandgap and phonon thermal conductivity of C3Si3/C (C3Ge3/C) are 0.54 (0.51) eV and 15.48 (12.64) W m-1 K-1, respectively, while the carrier mobility of C3Si3/C (C3Ge3/C) is 1.285 ×105 (1.311 ×105) cm2 V-1 s-1 at 300 K. The thermoelectric figure of merit for C3Si3/C (C3Ge3/C) can be optimized via the tuning of carrier concentration to obtain the prominent ZT value of 1.95 (2.72).",

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T1 - Electronic and thermoelectric properties of atomically thin C3Si3/C and C3Ge3/C superlattices

AU - Ali, Muhammad

AU - Pi, Xiaodong

AU - Liu, Yong

AU - Yang, Deren

PY - 2018/1/26

Y1 - 2018/1/26

N2 - The nanostructuring of graphene into superlattices offers the possibility of tuning both the electronic and thermal properties of graphene. Using classical and quantum mechanical calculations, we have investigated the electronic and thermoelectric properties of the atomically thin superlattice of C3Si3/C (C3Ge3/C) formed by the incorporation of Si (Ge) atoms into graphene. The bandgap and phonon thermal conductivity of C3Si3/C (C3Ge3/C) are 0.54 (0.51) eV and 15.48 (12.64) W m-1 K-1, respectively, while the carrier mobility of C3Si3/C (C3Ge3/C) is 1.285 ×105 (1.311 ×105) cm2 V-1 s-1 at 300 K. The thermoelectric figure of merit for C3Si3/C (C3Ge3/C) can be optimized via the tuning of carrier concentration to obtain the prominent ZT value of 1.95 (2.72).

AB - The nanostructuring of graphene into superlattices offers the possibility of tuning both the electronic and thermal properties of graphene. Using classical and quantum mechanical calculations, we have investigated the electronic and thermoelectric properties of the atomically thin superlattice of C3Si3/C (C3Ge3/C) formed by the incorporation of Si (Ge) atoms into graphene. The bandgap and phonon thermal conductivity of C3Si3/C (C3Ge3/C) are 0.54 (0.51) eV and 15.48 (12.64) W m-1 K-1, respectively, while the carrier mobility of C3Si3/C (C3Ge3/C) is 1.285 ×105 (1.311 ×105) cm2 V-1 s-1 at 300 K. The thermoelectric figure of merit for C3Si3/C (C3Ge3/C) can be optimized via the tuning of carrier concentration to obtain the prominent ZT value of 1.95 (2.72).

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