Electronic and magnetic properties of transition-metal-Doped monolayer black phosphorus by defect engineering

  • Yiren Wang
  • , Anh Pham
  • , Sean Li
  • , Jiabao Yi*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

We investigate the structural, electronic, and magnetic properties of monolayer black phosphorus (M-BP) doped with 3d transition-metal elements by considering defects and defect complexes. The results show that pristine M-BP is nonmagnetic. P vacancy (VP) can be magnetic with a rather high formation energy, and the (VP + VP) complex is nonmagnetic as well. Doping with transition metals of V, Cr, Mn, Fe, or Ni can induce magnetism, but Co doping will not. The magnetism is originated from their d orbitals. The formation energies of Mn, Co, and Fe doping can be significantly reduced with the existence of P vacancy by the formation of a substitutional and P vacancy (TMP + VP) defect complex. In addition, (CoP + VP) has a magnetic moment of 0.10 ?B, further demonstrating the important role of vacancy in the doping of transition-metal elements in M-BP.

Original languageEnglish
Pages (from-to)9773-9779
Number of pages7
JournalJournal of Physical Chemistry C
Volume120
Issue number18
DOIs
StatePublished - 12 May 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2016 American Chemical Society.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Energy
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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