Electron beam induced current at a Schottky nanocontact

The electron beam induced current (EBIC) collection efficiency η of a circular nano Schottky contact of radius rc perpendicular to the electron beam was simulated using a Monte Carlo (MC) algorithm. The EBIC was obtained by simulating the random diffusion and collection of the minority carriers that are generated at point-like sources S_i randomly distributed within the generation volume. The profile of the EBIC collection versus the distance to the nanocontact is simulated for two extreme values of the free surface recombination velocity v_s (v_s=0 and v_s=∞) . The dependence of the maximum value of the collection efficiency η_max, obtained as the electron beam impinges the surface at the centre of the nanocontact, was simulated as a function of radius r_c. In addition, the variation of η_max versus the incident beam energy was obtained.