Abstract
We report on the electromagnetic (EM) absorption potential and microwave heating capacity of amorphous hydrogenated silicon carbide thin films (a-SiC:H) in the 1-16 GHz frequency domain. a-SiC:H thin films with typical thickness of 1 μm were deposited by plasma enhanced chemical vapor deposition on [1 0 0] undoped silicon substrates, and exhibit a deep EM absorption - up to 96% of the total EM energy irradiation - which is systematically converted into heat. Two-wavelength pyrometer tests show that temperatures exceeding 2000 K can be reached in a very short time, less than 100 s exposure to microwaves, showing a promising potential for specific microwave heating applications.
| Original language | English |
|---|---|
| Pages (from-to) | 5482-5485 |
| Number of pages | 4 |
| Journal | Applied Surface Science |
| Volume | 258 |
| Issue number | 14 |
| DOIs | |
| State | Published - 1 May 2012 |
Bibliographical note
Funding Information:We acknowledge financial support from the Canada Foundation for Innovation , the Natural Science and Engineering Research Council (NSERC) of Canada , the Fonds Québécois de la Recherche sur la Nature et les Technologies (FQRNT) . F.R. is grateful to the Canada Research Chairs Program for partial salary support and to MDEIE for an international collaboration grant with the University of Rome “Tor Vergata”.
Keywords
- EM absorption
- Microwave heating
- PECVD
- Silicon carbide materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films