Abstract
A general approach for fabricating metallic and semiconducting nanostructures has been developed based on "dip-pen" nanolithography combined with electrochemical reduction of water-soluble salts. This method can be used to directly write many different types of metal or semiconductor features on Si substrates with sub 50 nanometer linewidth. This simple but powerful method has great potential in fabricating functional nanodevices with high degree of control over their locations and structures.
| Original language | English |
|---|---|
| Pages (from-to) | 75-78 |
| Number of pages | 4 |
| Journal | Chinese Journal of Inorganic Chemistry |
| Volume | 18 |
| Issue number | 1 |
| State | Published - 2002 |
Keywords
- AFM
- Dip-pen lithography
- Electrochemical
- Nanopatterns
ASJC Scopus subject areas
- Inorganic Chemistry
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