Electrical switching effects in Na2O/SiO2glasses

E. E. Khawaja; M. N. Khan; C. A. Hogarth

doi:10.1080/00207218308961595

Electrical switching effects in Na₂O/SiO₂glasses

E. E. Khawaja
, M. N. Khan
, C. A. Hogarth

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

Abstract

A range of specimens in the form of thin blown films is shown to exhibit memory switching at an applied voltage of 8-10 V.

Original language	English
Pages (from-to)	303-305
Number of pages	3
Journal	International Journal of Electronics
Volume	55
Issue number	2
DOIs	https://doi.org/10.1080/00207218308961595
State	Published - Aug 1983

Bibliographical note

Funding Information:
The support funded by the University of Petroleum and Minerals Research Committee is gratefully acknowledged.

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1080/00207218308961595

Cite this

@article{29feaab3011b460aa0e711faa7307603,

title = "Electrical switching effects in Na2O/SiO2glasses",

abstract = "A range of specimens in the form of thin blown films is shown to exhibit memory switching at an applied voltage of 8-10 V.",

author = "Khawaja, \{E. E.\} and Khan, \{M. N.\} and Hogarth, \{C. A.\}",

note = "Funding Information: The support funded by the University of Petroleum and Minerals Research Committee is gratefully acknowledged.",

year = "1983",

month = aug,

doi = "10.1080/00207218308961595",

language = "English",

volume = "55",

pages = "303--305",

journal = "International Journal of Electronics",

issn = "0020-7217",

publisher = "Taylor and Francis Ltd.",

number = "2",

}

TY - JOUR

T1 - Electrical switching effects in Na2O/SiO2glasses

AU - Khawaja, E. E.

AU - Khan, M. N.

AU - Hogarth, C. A.

N1 - Funding Information: The support funded by the University of Petroleum and Minerals Research Committee is gratefully acknowledged.

PY - 1983/8

Y1 - 1983/8

N2 - A range of specimens in the form of thin blown films is shown to exhibit memory switching at an applied voltage of 8-10 V.

AB - A range of specimens in the form of thin blown films is shown to exhibit memory switching at an applied voltage of 8-10 V.

UR - https://www.scopus.com/pages/publications/0020798687

U2 - 10.1080/00207218308961595

DO - 10.1080/00207218308961595

M3 - Article

AN - SCOPUS:0020798687

SN - 0020-7217

VL - 55

SP - 303

EP - 305

JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 2

ER -