Electrical conductivity of semiconducting V2O5-GeO2glasses

M. N. Khan; E. E. Khawaja; D. Save; A. A. Kutub; C. A. Hogarth

doi:10.1080/00207218408938830

Electrical conductivity of semiconducting V₂O₅-GeO₂glasses

M. N. Khan
, E. E. Khawaja
, D. Save
, A. A. Kutub
, C. A. Hogarth

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The DC conductivity of semiconducting vanadium germanate glasses of compositions in the range of 40-70 mol(%)V₂O₅has been measured in the temperature region 300-530 K. Measurements have been made on unannealed samples and some samples annealed at 300°C. Annealing the samples at temperatures of about 300°C causes the appearance of a crystalline phase resulting in an increase of conductivity. The crystalline temperature has been estimated from the conductivity data for unannealed samples. These seem to be in reasonable agreement with the corresponding results found in the literature.

Original language	English
Pages (from-to)	395-401
Number of pages	7
Journal	International Journal of Electronics
Volume	56
Issue number	3
DOIs	https://doi.org/10.1080/00207218408938830
State	Published - Mar 1984

Bibliographical note

Funding Information:
The support funded by the University of Petroleum and Minerals Research Committee is gratcfully acknowledged.

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1080/00207218408938830

Cite this

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title = "Electrical conductivity of semiconducting V2O5-GeO2glasses",

abstract = "The DC conductivity of semiconducting vanadium germanate glasses of compositions in the range of 40-70 mol(\%)V2O5has been measured in the temperature region 300-530 K. Measurements have been made on unannealed samples and some samples annealed at 300°C. Annealing the samples at temperatures of about 300°C causes the appearance of a crystalline phase resulting in an increase of conductivity. The crystalline temperature has been estimated from the conductivity data for unannealed samples. These seem to be in reasonable agreement with the corresponding results found in the literature.",

author = "Khan, \{M. N.\} and Khawaja, \{E. E.\} and D. Save and Kutub, \{A. A.\} and Hogarth, \{C. A.\}",

note = "Funding Information: The support funded by the University of Petroleum and Minerals Research Committee is gratcfully acknowledged.",

year = "1984",

month = mar,

doi = "10.1080/00207218408938830",

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journal = "International Journal of Electronics",

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T1 - Electrical conductivity of semiconducting V2O5-GeO2glasses

AU - Khan, M. N.

AU - Khawaja, E. E.

AU - Save, D.

AU - Kutub, A. A.

AU - Hogarth, C. A.

N1 - Funding Information: The support funded by the University of Petroleum and Minerals Research Committee is gratcfully acknowledged.

PY - 1984/3

Y1 - 1984/3

N2 - The DC conductivity of semiconducting vanadium germanate glasses of compositions in the range of 40-70 mol(%)V2O5has been measured in the temperature region 300-530 K. Measurements have been made on unannealed samples and some samples annealed at 300°C. Annealing the samples at temperatures of about 300°C causes the appearance of a crystalline phase resulting in an increase of conductivity. The crystalline temperature has been estimated from the conductivity data for unannealed samples. These seem to be in reasonable agreement with the corresponding results found in the literature.

AB - The DC conductivity of semiconducting vanadium germanate glasses of compositions in the range of 40-70 mol(%)V2O5has been measured in the temperature region 300-530 K. Measurements have been made on unannealed samples and some samples annealed at 300°C. Annealing the samples at temperatures of about 300°C causes the appearance of a crystalline phase resulting in an increase of conductivity. The crystalline temperature has been estimated from the conductivity data for unannealed samples. These seem to be in reasonable agreement with the corresponding results found in the literature.

UR - https://www.scopus.com/pages/publications/0021388976

U2 - 10.1080/00207218408938830

DO - 10.1080/00207218408938830

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JO - International Journal of Electronics

JF - International Journal of Electronics

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