Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

Mohamed T. Ghoneim; Jhonathan P. Rojas; Chadwin D. Young; Gennadi Bersuker; Muhammad M. Hussain

doi:10.1109/TR.2014.2371054

Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

Mohamed T. Ghoneim, Jhonathan P. Rojas, Chadwin D. Young, Gennadi Bersuker, Muhammad M. Hussain

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (V_ramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer.

Original language	English
Article number	6967871
Pages (from-to)	579-585
Number of pages	7
Journal	IEEE Transactions on Reliability
Volume	64
Issue number	2
DOIs	https://doi.org/10.1109/TR.2014.2371054
State	Published - 1 Jun 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

Flexible
Weibull distribution
lifetime projection
metal oxide semiconductor capacitors
time dependent dielectric breakdown
voltage breakdown

ASJC Scopus subject areas

Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

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10.1109/TR.2014.2371054

Cite this

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abstract = "We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer.",

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Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon. / Ghoneim, Mohamed T.; Rojas, Jhonathan P.; Young, Chadwin D. et al.
In: IEEE Transactions on Reliability, Vol. 64, No. 2, 6967871, 01.06.2015, p. 579-585.

Research output: Contribution to journal › Article › peer-review

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Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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