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Effects of the carrier density on the THz-induced nonlinearity in photoexcited GaAs

  • G. Sharma*
  • , H. Hafez
  • , I. Al-Naib
  • , R. Morandotti
  • , T. Ozaki
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We investigate the effects of electron carrier density on the nonlinear response of photoexcited GaAs, illuminated by intense terahertz fields. We use the optical-pump/THz-probe technique, and explain our experimental results with an intervalley-scattering-based model.

Original languageEnglish
Title of host publicationIRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves
DOIs
StatePublished - 2011
Externally publishedYes
Event36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011 - Houston, TX, United States
Duration: 2 Oct 20117 Oct 2011

Publication series

NameIRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves

Conference

Conference36th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2011
Country/TerritoryUnited States
CityHouston, TX
Period2/10/117/10/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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