Effects of electrode spacing on the response of optically controlled MESFETs

M. A. Alsunaidi; M. A. Al-Absi

doi:10.1109/NUSOD.2003.1259045

Effects of electrode spacing on the response of optically controlled MESFETs

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 μm. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time.

Original language	English
Title of host publication	Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	51-52
Number of pages	2
ISBN (Electronic)	0780379926, 9780780379923
DOIs	https://doi.org/10.1109/NUSOD.2003.1259045
State	Published - 2003

Publication series

Name	Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003
Volume	2003-October

Bibliographical note

Publisher Copyright:
© 2003 IEEE.

Keywords

Electrodes
Energy conversion
Equations
MESFETs
MOSFET circuits
Optical control
Optical coupling
Optical design
Optical pulses
Photoconductivity

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/NUSOD.2003.1259045

Cite this

Alsunaidi, M. A., & Al-Absi, M. A. (2003). Effects of electrode spacing on the response of optically controlled MESFETs. In Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003 (pp. 51-52). Article 1259045 (Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003; Vol. 2003-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NUSOD.2003.1259045

Alsunaidi, M. A. ; Al-Absi, M. A. / Effects of electrode spacing on the response of optically controlled MESFETs. Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 51-52 (Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003).

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abstract = "An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 μm. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time.",

keywords = "Electrodes, Energy conversion, Equations, MESFETs, MOSFET circuits, Optical control, Optical coupling, Optical design, Optical pulses, Photoconductivity",

author = "Alsunaidi, {M. A.} and Al-Absi, {M. A.}",

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Alsunaidi, MA & Al-Absi, MA 2003, Effects of electrode spacing on the response of optically controlled MESFETs. in Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003., 1259045, Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003, vol. 2003-October, Institute of Electrical and Electronics Engineers Inc., pp. 51-52. https://doi.org/10.1109/NUSOD.2003.1259045

Effects of electrode spacing on the response of optically controlled MESFETs. / Alsunaidi, M. A.; Al-Absi, M. A.
Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 51-52 1259045 (Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003; Vol. 2003-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Alsunaidi MA, Al-Absi MA. Effects of electrode spacing on the response of optically controlled MESFETs. In Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 51-52. 1259045. (Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003). doi: 10.1109/NUSOD.2003.1259045

Effects of electrode spacing on the response of optically controlled MESFETs

Abstract

Publication series

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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Cite this