Effects of Ca2+, Sn4+, and Ti4+ doping on the structural, dielectric, and electrical properties of Ba(Zn1/3Nb2/3)O3 ceramics

Haroon Ur Rashid; Sarir Uddin; Khalil A. Ziq; Firoz Khan; Bakhtiar Ul Haq; Khan Alam

doi:10.1557/s43579-025-00875-x

Effects of Ca²⁺, Sn⁴⁺, and Ti⁴⁺ doping on the structural, dielectric, and electrical properties of Ba(Zn_1/3Nb_2/3)O₃ ceramics

Haroon Ur Rashid, Sarir Uddin, Khalil A. Ziq, Firoz Khan, Bakhtiar Ul Haq, Khan Alam^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Ternary substitutions of Ca²⁺, Sn⁴⁺, and Ti⁴⁺ (20%) into Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramics were studied for structural, dielectric, and electrical properties. Compositions prepared via solid-state reaction, showed single-phase cubic (Pm3̅m) structures, with lattice expansion for Ca²⁺ and contraction for Sn⁴⁺/Ti⁴⁺. SEM revealed grain refinement most pronounced, in Ti⁴⁺ doped BZN (BZTN, 3.28 µm). BZTN exhibited the highest dielectric constant (~ 34,000), diffuse transition near 230℃, and loss tangent of 10.75 (1 kHz). BZTN also gave the maximum current (2.06 × 10^–2 A at 5 V, 500℃), while Sn⁴⁺-doped BZN showed highest conductivity and lowest resistance, confirming enhanced defect-mediated charge transport.

Original language	English
Journal	MRS Communications
DOIs	https://doi.org/10.1557/s43579-025-00875-x
State	Accepted/In press - 2025

Bibliographical note

Publisher Copyright:
© The Author(s), under exclusive licence to The Materials Research Society 2025.

Keywords

Dielectric properties
Electronic material
Energy storage
Ferroelectric
Phase transformation

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1557/s43579-025-00875-x

Cite this

@article{37a4eaff60c342d18847633ac13b81dc,

title = "Effects of Ca2+, Sn4+, and Ti4+ doping on the structural, dielectric, and electrical properties of Ba(Zn1/3Nb2/3)O3 ceramics",

abstract = "Ternary substitutions of Ca2+, Sn4+, and Ti4+ (20\%) into Ba(Zn1/3Nb2/3)O3 (BZN) ceramics were studied for structural, dielectric, and electrical properties. Compositions prepared via solid-state reaction, showed single-phase cubic (Pm3̅m) structures, with lattice expansion for Ca2+ and contraction for Sn4+/Ti4+. SEM revealed grain refinement most pronounced, in Ti4+ doped BZN (BZTN, 3.28 µm). BZTN exhibited the highest dielectric constant (\textasciitilde{} 34,000), diffuse transition near 230℃, and loss tangent of 10.75 (1 kHz). BZTN also gave the maximum current (2.06 × 10–2 A at 5 V, 500℃), while Sn4+-doped BZN showed highest conductivity and lowest resistance, confirming enhanced defect-mediated charge transport.",

keywords = "Dielectric properties, Electronic material, Energy storage, Ferroelectric, Phase transformation",

author = "Rashid, \{Haroon Ur\} and Sarir Uddin and Ziq, \{Khalil A.\} and Firoz Khan and Haq, \{Bakhtiar Ul\} and Khan Alam",

note = "Publisher Copyright: {\textcopyright} The Author(s), under exclusive licence to The Materials Research Society 2025.",

year = "2025",

doi = "10.1557/s43579-025-00875-x",

language = "English",

journal = "MRS Communications",

issn = "2159-6859",

publisher = "Springer International Publishing AG",

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TY - JOUR

T1 - Effects of Ca2+, Sn4+, and Ti4+ doping on the structural, dielectric, and electrical properties of Ba(Zn1/3Nb2/3)O3 ceramics

AU - Rashid, Haroon Ur

AU - Uddin, Sarir

AU - Ziq, Khalil A.

AU - Khan, Firoz

AU - Haq, Bakhtiar Ul

AU - Alam, Khan

PY - 2025

Y1 - 2025

N2 - Ternary substitutions of Ca2+, Sn4+, and Ti4+ (20%) into Ba(Zn1/3Nb2/3)O3 (BZN) ceramics were studied for structural, dielectric, and electrical properties. Compositions prepared via solid-state reaction, showed single-phase cubic (Pm3̅m) structures, with lattice expansion for Ca2+ and contraction for Sn4+/Ti4+. SEM revealed grain refinement most pronounced, in Ti4+ doped BZN (BZTN, 3.28 µm). BZTN exhibited the highest dielectric constant (~ 34,000), diffuse transition near 230℃, and loss tangent of 10.75 (1 kHz). BZTN also gave the maximum current (2.06 × 10–2 A at 5 V, 500℃), while Sn4+-doped BZN showed highest conductivity and lowest resistance, confirming enhanced defect-mediated charge transport.

AB - Ternary substitutions of Ca2+, Sn4+, and Ti4+ (20%) into Ba(Zn1/3Nb2/3)O3 (BZN) ceramics were studied for structural, dielectric, and electrical properties. Compositions prepared via solid-state reaction, showed single-phase cubic (Pm3̅m) structures, with lattice expansion for Ca2+ and contraction for Sn4+/Ti4+. SEM revealed grain refinement most pronounced, in Ti4+ doped BZN (BZTN, 3.28 µm). BZTN exhibited the highest dielectric constant (~ 34,000), diffuse transition near 230℃, and loss tangent of 10.75 (1 kHz). BZTN also gave the maximum current (2.06 × 10–2 A at 5 V, 500℃), while Sn4+-doped BZN showed highest conductivity and lowest resistance, confirming enhanced defect-mediated charge transport.

KW - Dielectric properties

KW - Electronic material

KW - Energy storage

KW - Ferroelectric

KW - Phase transformation

UR - https://www.scopus.com/pages/publications/105020574135

U2 - 10.1557/s43579-025-00875-x

DO - 10.1557/s43579-025-00875-x

M3 - Article

AN - SCOPUS:105020574135

SN - 2159-6859

JO - MRS Communications

JF - MRS Communications

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