Effect of yttrium doping on the dielectric properties of CaCu3Ti4O12 thin film produced by chemical solution deposition

Viswanathan S. Saji; Han Cheol Choe

doi:10.1016/j.tsf.2009.01.100

Effect of yttrium doping on the dielectric properties of CaCu₃Ti₄O₁₂ thin film produced by chemical solution deposition

Viswanathan S. Saji^*
, Han Cheol Choe

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Pure and yttrium substituted CaCu₃Ti_{4 - x}Y_xO_{12 - x / 2} (x = 0, 0.02, 0.1) thin films were prepared on boron doped silica substrate employing chemical solution deposition, spin coating and rapid thermal annealing. The phase and microstructure of the sintered films were examined using X-ray diffraction and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using electrochemical impedance spectroscopy. Highly ordered polycrystalline CCTO thin film with bimodal grain size distribution was achieved at a sintering temperature of 800 °C. Yttrium doping was found to have beneficial effects on the dielectric properties of CCTO thin film. Dielectric parameters obtained for a CaCu₃Ti_{4 - x}Y_xO_{12 - x / 2} (x = 0.02) film at 1 KHz were k ∼ 2700 and tan δ ∼ 0.07.

Original language	English
Pages (from-to)	3896-3899
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	14
DOIs	https://doi.org/10.1016/j.tsf.2009.01.100
State	Published - 29 May 2009
Externally published	Yes

Keywords

CaCuTiO
Chemical solution deposition
Dielectric properties
Thin film
Yttrium doping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2009.01.100

Cite this

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title = "Effect of yttrium doping on the dielectric properties of CaCu3Ti4O12 thin film produced by chemical solution deposition",

abstract = "Pure and yttrium substituted CaCu3Ti4 - xYxO12 - x / 2 (x = 0, 0.02, 0.1) thin films were prepared on boron doped silica substrate employing chemical solution deposition, spin coating and rapid thermal annealing. The phase and microstructure of the sintered films were examined using X-ray diffraction and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using electrochemical impedance spectroscopy. Highly ordered polycrystalline CCTO thin film with bimodal grain size distribution was achieved at a sintering temperature of 800 °C. Yttrium doping was found to have beneficial effects on the dielectric properties of CCTO thin film. Dielectric parameters obtained for a CaCu3Ti4 - xYxO12 - x / 2 (x = 0.02) film at 1 KHz were k ∼ 2700 and tan δ ∼ 0.07.",

keywords = "CaCuTiO, Chemical solution deposition, Dielectric properties, Thin film, Yttrium doping",

author = "Saji, \{Viswanathan S.\} and Choe, \{Han Cheol\}",

year = "2009",

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doi = "10.1016/j.tsf.2009.01.100",

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journal = "Thin Solid Films",

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T1 - Effect of yttrium doping on the dielectric properties of CaCu3Ti4O12 thin film produced by chemical solution deposition

AU - Saji, Viswanathan S.

AU - Choe, Han Cheol

PY - 2009/5/29

Y1 - 2009/5/29

N2 - Pure and yttrium substituted CaCu3Ti4 - xYxO12 - x / 2 (x = 0, 0.02, 0.1) thin films were prepared on boron doped silica substrate employing chemical solution deposition, spin coating and rapid thermal annealing. The phase and microstructure of the sintered films were examined using X-ray diffraction and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using electrochemical impedance spectroscopy. Highly ordered polycrystalline CCTO thin film with bimodal grain size distribution was achieved at a sintering temperature of 800 °C. Yttrium doping was found to have beneficial effects on the dielectric properties of CCTO thin film. Dielectric parameters obtained for a CaCu3Ti4 - xYxO12 - x / 2 (x = 0.02) film at 1 KHz were k ∼ 2700 and tan δ ∼ 0.07.

AB - Pure and yttrium substituted CaCu3Ti4 - xYxO12 - x / 2 (x = 0, 0.02, 0.1) thin films were prepared on boron doped silica substrate employing chemical solution deposition, spin coating and rapid thermal annealing. The phase and microstructure of the sintered films were examined using X-ray diffraction and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using electrochemical impedance spectroscopy. Highly ordered polycrystalline CCTO thin film with bimodal grain size distribution was achieved at a sintering temperature of 800 °C. Yttrium doping was found to have beneficial effects on the dielectric properties of CCTO thin film. Dielectric parameters obtained for a CaCu3Ti4 - xYxO12 - x / 2 (x = 0.02) film at 1 KHz were k ∼ 2700 and tan δ ∼ 0.07.

KW - CaCuTiO

KW - Chemical solution deposition

KW - Dielectric properties

KW - Thin film

KW - Yttrium doping

UR - https://www.scopus.com/pages/publications/65449157164

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