Effect of the number of stacking layers on the characteristics of quantum-dash lasers

M. Z.M. Khan; T. K. Ng; U. Schwingenschlogl; P. Bhattacharya; B. S. Ooi

doi:10.1364/OE.19.013378

Effect of the number of stacking layers on the characteristics of quantum-dash lasers

M. Z.M. Khan^*
, T. K. Ng
, U. Schwingenschlogl
, P. Bhattacharya
, B. S. Ooi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region.

Original language	English
Pages (from-to)	13378-13385
Number of pages	8
Journal	Optics Express
Volume	19
Issue number	14
DOIs	https://doi.org/10.1364/OE.19.013378
State	Published - 4 Jul 2011
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region.",

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AU - Ng, T. K.

AU - Schwingenschlogl, U.

AU - Bhattacharya, P.

AU - Ooi, B. S.

PY - 2011/7/4

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AB - A theoretical model is evaluated to investigate the characteristics of InAs/InP quantum dash (Qdash) lasers as a function of the stack number. The model is based on multimode carrier-photon rate equations and accounts for both inhomogeneous and homogeneous broadenings of the optical gain. The numerical results show a non monotonic increase in the threshold current density and a red shift in the lasing wavelength on increasing the stack number, which agrees well with reported experimental results. This observation may partly be attributed to an increase of inhomogeneity in the active region.

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Effect of the number of stacking layers on the characteristics of quantum-dash lasers

Abstract

ASJC Scopus subject areas

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