Effect of Sn doping on thermoelectric properties of p-type manganese telluride

Abdul Basit; Junyou Yang; Qinghui Jiang; Zhiwei Zhou; Jiwu Xin; Xin Li; Sihui Li

doi:10.1016/j.jallcom.2018.11.066

Effect of Sn doping on thermoelectric properties of p-type manganese telluride

Abdul Basit
, Junyou Yang^*
, Qinghui Jiang
, Zhiwei Zhou
, Jiwu Xin
, Xin Li
, Sihui Li

^*Corresponding author for this work

Interdisciplinary Research Center for Sustainable Energy Systems

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Here, the intellectual challenges for thermoelectric materials revolves around the strategy of point defect engineering to regulate the electrical and thermal transport nature of Mn_1.06-xSn_xTe (x = 0, 0.03, 0.035, 0.04, 0.045) materials. The power factor increases with substitution of Sn into the lattice of Mn_1.06Te leading to enhance the carrier concentrations due to reduction of the band gap. Meanwhile, the thermal conductivity has also been remarkably reduced due to diverse phonon scattering and mass fluctuation by Sn substitution. As a result, a maximum ZT∼0.93 for Mn_1.06-xSn_xTe (x = 0.04) sample has been achieved at 873 K, which increases by 56% in comparison with the un-doped sample.

Original language	English
Pages (from-to)	968-973
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	777
DOIs	https://doi.org/10.1016/j.jallcom.2018.11.066
State	Published - 10 Mar 2019

Bibliographical note

Publisher Copyright:
© 2018 Elsevier B.V.

Keywords

Carrier concentration
MnTe
Point defects
Sn-doping
Thermoelectric properties

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2018.11.066

Cite this

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title = "Effect of Sn doping on thermoelectric properties of p-type manganese telluride",

abstract = "Here, the intellectual challenges for thermoelectric materials revolves around the strategy of point defect engineering to regulate the electrical and thermal transport nature of Mn1.06-xSnxTe (x = 0, 0.03, 0.035, 0.04, 0.045) materials. The power factor increases with substitution of Sn into the lattice of Mn1.06Te leading to enhance the carrier concentrations due to reduction of the band gap. Meanwhile, the thermal conductivity has also been remarkably reduced due to diverse phonon scattering and mass fluctuation by Sn substitution. As a result, a maximum ZT∼0.93 for Mn1.06-xSnxTe (x = 0.04) sample has been achieved at 873 K, which increases by 56\% in comparison with the un-doped sample.",

keywords = "Carrier concentration, MnTe, Point defects, Sn-doping, Thermoelectric properties",

author = "Abdul Basit and Junyou Yang and Qinghui Jiang and Zhiwei Zhou and Jiwu Xin and Xin Li and Sihui Li",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2019",

month = mar,

day = "10",

doi = "10.1016/j.jallcom.2018.11.066",

language = "English",

volume = "777",

pages = "968--973",

journal = "Journal of Alloys and Compounds",

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TY - JOUR

T1 - Effect of Sn doping on thermoelectric properties of p-type manganese telluride

AU - Basit, Abdul

AU - Yang, Junyou

AU - Jiang, Qinghui

AU - Zhou, Zhiwei

AU - Xin, Jiwu

AU - Li, Xin

AU - Li, Sihui

PY - 2019/3/10

Y1 - 2019/3/10

N2 - Here, the intellectual challenges for thermoelectric materials revolves around the strategy of point defect engineering to regulate the electrical and thermal transport nature of Mn1.06-xSnxTe (x = 0, 0.03, 0.035, 0.04, 0.045) materials. The power factor increases with substitution of Sn into the lattice of Mn1.06Te leading to enhance the carrier concentrations due to reduction of the band gap. Meanwhile, the thermal conductivity has also been remarkably reduced due to diverse phonon scattering and mass fluctuation by Sn substitution. As a result, a maximum ZT∼0.93 for Mn1.06-xSnxTe (x = 0.04) sample has been achieved at 873 K, which increases by 56% in comparison with the un-doped sample.

AB - Here, the intellectual challenges for thermoelectric materials revolves around the strategy of point defect engineering to regulate the electrical and thermal transport nature of Mn1.06-xSnxTe (x = 0, 0.03, 0.035, 0.04, 0.045) materials. The power factor increases with substitution of Sn into the lattice of Mn1.06Te leading to enhance the carrier concentrations due to reduction of the band gap. Meanwhile, the thermal conductivity has also been remarkably reduced due to diverse phonon scattering and mass fluctuation by Sn substitution. As a result, a maximum ZT∼0.93 for Mn1.06-xSnxTe (x = 0.04) sample has been achieved at 873 K, which increases by 56% in comparison with the un-doped sample.

KW - Carrier concentration

KW - MnTe

KW - Point defects

KW - Sn-doping

KW - Thermoelectric properties

UR - https://www.scopus.com/pages/publications/85056451623

U2 - 10.1016/j.jallcom.2018.11.066

DO - 10.1016/j.jallcom.2018.11.066

M3 - Article

AN - SCOPUS:85056451623

SN - 0925-8388

VL - 777

SP - 968

EP - 973

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Effect of Sn doping on thermoelectric properties of p-type manganese telluride

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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