TY - JOUR
T1 - Effect of potassium permanganate on morphological, structural and electro-optical properties of graphene oxide thin films
AU - Kashif, Muhammad
AU - Jaafar, Erdawaty
AU - Bhadja, Poonam
AU - Wah Low, Foo
AU - Kudnie Sahari, Siti
AU - Hussain, Shahid
AU - Kai Loong, Foo
AU - Ahmad, Awais
AU - Saad AlGarni, Tahani
AU - Shafa, Muhammad
AU - Asghar, Humaira
AU - Al-Tamrah, Saad A.
N1 - Publisher Copyright:
© 2020 The Authors
PY - 2021/2
Y1 - 2021/2
N2 - This work investigated the effect of Potassium Permanganate (KMnO4) on graphene oxide (GO) properties, especially on electrical properties. The GO thin films were deposited on a glass substrate using drop casting technique and were analysed by using various type of spectroscopy (e.g. Scanning Electron Microscopy (SEM), Ultra- Violet Visible (UV–VIS), Fourier Transform Infrared (FTIR), X-Ray Diffraction (XRD), optical band gap, Raman Spectroscopy). Furthermore, the electrical experiments were carried out by using current–voltage (I-V) characteristic. The GO thin film with 4.5 g of KMnO4 resulted in higher conductivity which is 3.11 × 10−4 S/cm while GO with 2.5 g and 3.5 g of KMnO4 achieve 2.47 × 10−9 S/cm and 1.07 × 10−7 S/cm, respectively. This further affects the morphological (SEM), optical (band gap, UV–Vis, FTIR, and Raman), and crystalline structural (XRD) properties of the GO thin films. The morphological, elemental, optical, and structural data confirmed that the properties of GO is affected by different amount of KMnO4 oxidizing agent, which revealed that GO can potentially be implemented for electrical and electronic devices.
AB - This work investigated the effect of Potassium Permanganate (KMnO4) on graphene oxide (GO) properties, especially on electrical properties. The GO thin films were deposited on a glass substrate using drop casting technique and were analysed by using various type of spectroscopy (e.g. Scanning Electron Microscopy (SEM), Ultra- Violet Visible (UV–VIS), Fourier Transform Infrared (FTIR), X-Ray Diffraction (XRD), optical band gap, Raman Spectroscopy). Furthermore, the electrical experiments were carried out by using current–voltage (I-V) characteristic. The GO thin film with 4.5 g of KMnO4 resulted in higher conductivity which is 3.11 × 10−4 S/cm while GO with 2.5 g and 3.5 g of KMnO4 achieve 2.47 × 10−9 S/cm and 1.07 × 10−7 S/cm, respectively. This further affects the morphological (SEM), optical (band gap, UV–Vis, FTIR, and Raman), and crystalline structural (XRD) properties of the GO thin films. The morphological, elemental, optical, and structural data confirmed that the properties of GO is affected by different amount of KMnO4 oxidizing agent, which revealed that GO can potentially be implemented for electrical and electronic devices.
KW - Electrical
KW - Graphene oxide
KW - Oxidizing agent
KW - Potassium permanganate
KW - Thin film
UR - https://www.scopus.com/pages/publications/85098697019
U2 - 10.1016/j.arabjc.2020.102953
DO - 10.1016/j.arabjc.2020.102953
M3 - Article
AN - SCOPUS:85098697019
SN - 1878-5352
VL - 14
JO - Arabian Journal of Chemistry
JF - Arabian Journal of Chemistry
IS - 2
M1 - 102953
ER -