Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide

Gunawan Witjaksono; Muhammad Junaid; Mohd Haris Khir; Zaka Ullah; Nelson Tansu; Mohamed Shuaib Bin Mohamed Saheed; Muhammad Aadil Siddiqui; Saeed S. Ba-Hashwan; Abdullah Saleh Algamili; Saeed Ahmed Magsi; Muhammad Zubair Aslam; Rab Nawaz

doi:10.3390/molecules26216424

Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide

Gunawan Witjaksono^*
, Muhammad Junaid^*
, Mohd Haris Khir
, Zaka Ullah
, Nelson Tansu
, Mohamed Shuaib Bin Mohamed Saheed
, Muhammad Aadil Siddiqui
, Saeed S. Ba-Hashwan
, Abdullah Saleh Algamili
, Saeed Ahmed Magsi
, Muhammad Zubair Aslam
, Rab Nawaz

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

Graphene as a material for optoelectronic design applications has been significantly re-stricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect mea-surement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.

Original language	English
Article number	6424
Journal	Molecules
Volume	26
Issue number	21
DOIs	https://doi.org/10.3390/molecules26216424
State	Published - 1 Nov 2021
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

Conductivity
Nitrogen-doped reduced graphene oxide
Optical bandgap tunning
Optoelectronic

ASJC Scopus subject areas

Analytical Chemistry
Chemistry (miscellaneous)
Molecular Medicine
Pharmaceutical Science
Drug Discovery
Physical and Theoretical Chemistry
Organic Chemistry

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10.3390/molecules26216424

Cite this

Witjaksono, G., Junaid, M., Khir, M. H., Ullah, Z., Tansu, N., Saheed, M. S. B. M., Siddiqui, M. A., Ba-Hashwan, S. S., Algamili, A. S., Magsi, S. A., Aslam, M. Z., & Nawaz, R. (2021). Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide. Molecules, 26(21), Article 6424. https://doi.org/10.3390/molecules26216424

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title = "Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide",

abstract = "Graphene as a material for optoelectronic design applications has been significantly re-stricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.\%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect mea-surement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.",

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AU - Junaid, Muhammad

AU - Khir, Mohd Haris

AU - Ullah, Zaka

AU - Tansu, Nelson

AU - Saheed, Mohamed Shuaib Bin Mohamed

AU - Siddiqui, Muhammad Aadil

AU - Ba-Hashwan, Saeed S.

AU - Algamili, Abdullah Saleh

AU - Magsi, Saeed Ahmed

AU - Aslam, Muhammad Zubair

AU - Nawaz, Rab

PY - 2021/11/1

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N2 - Graphene as a material for optoelectronic design applications has been significantly re-stricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect mea-surement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.

AB - Graphene as a material for optoelectronic design applications has been significantly re-stricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect mea-surement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.

KW - Conductivity

KW - Nitrogen-doped reduced graphene oxide

KW - Optical bandgap tunning

KW - Optoelectronic

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DO - 10.3390/molecules26216424

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Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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