Effect of illumination intensity on cell parameters of a silicon solar cell

Firoz Khan; S. N. Singh; M. Husain

doi:10.1016/j.solmat.2010.03.018

Effect of illumination intensity on cell parameters of a silicon solar cell

Firoz Khan^*
, S. N. Singh
, M. Husain

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

166 Scopus citations

Abstract

The effect of illumination intensity P_in on the cell parameters of a silicon solar cell has been investigated based on one diode model. The variation of slopes of the IV curves of a cell at short circuit and open circuit conditions with intensity of illumination in small span of intensity has been applied to determine the cell parameters, viz. shunt resistance R_sh, series resistance R_s, diode ideality factor n and reverse saturation current I₀ of the cell. The dependence of cell parameters on intensity has been investigated for a fairly wide illumination intensity range 15180 mW/cm² of AM1.5 solar radiations by dividing this intensity range into a desirable number of small intensity ranges for measurements of the slopes of the IV curves at short circuit and open circuit conditions. Initially R_sh increases slightly with P_in and then becomes constant at higher P_in values. However, R_s, n and I₀ all decrease continuously with P_in, but the rate of decrease of each of these becomes smaller at higher P_in values. Theoretical values of open circuit voltage V_oc, curve factor CF and efficiency η calculated using the cell parameters determined by the present method match well with the corresponding experimental values.

Original language	English
Pages (from-to)	1473-1476
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	94
Issue number	9
DOIs	https://doi.org/10.1016/j.solmat.2010.03.018
State	Published - Sep 2010
Externally published	Yes

Bibliographical note

Funding Information:
The authors are thankful to Director, National Physical Laboratory, New Delhi, for his permission to publish this paper. The author Firoz Khan gratefully acknowledges the support of Council of Scientific and Industrial Research (CSIR), India.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Cell parameters
Diode ideality factor
Series resistance
Shunt resistance
Silicon solar cells

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

Access to Document

10.1016/j.solmat.2010.03.018

Cite this

@article{c813a244cff1490ca531acb7c27e981f,

title = "Effect of illumination intensity on cell parameters of a silicon solar cell",

abstract = "The effect of illumination intensity Pin on the cell parameters of a silicon solar cell has been investigated based on one diode model. The variation of slopes of the IV curves of a cell at short circuit and open circuit conditions with intensity of illumination in small span of intensity has been applied to determine the cell parameters, viz. shunt resistance Rsh, series resistance Rs, diode ideality factor n and reverse saturation current I0 of the cell. The dependence of cell parameters on intensity has been investigated for a fairly wide illumination intensity range 15180 mW/cm2 of AM1.5 solar radiations by dividing this intensity range into a desirable number of small intensity ranges for measurements of the slopes of the IV curves at short circuit and open circuit conditions. Initially Rsh increases slightly with Pin and then becomes constant at higher Pin values. However, Rs, n and I0 all decrease continuously with Pin, but the rate of decrease of each of these becomes smaller at higher Pin values. Theoretical values of open circuit voltage Voc, curve factor CF and efficiency η calculated using the cell parameters determined by the present method match well with the corresponding experimental values.",

keywords = "Cell parameters, Diode ideality factor, Series resistance, Shunt resistance, Silicon solar cells",

author = "Firoz Khan and Singh, \{S. N.\} and M. Husain",

note = "Funding Information: The authors are thankful to Director, National Physical Laboratory, New Delhi, for his permission to publish this paper. The author Firoz Khan gratefully acknowledges the support of Council of Scientific and Industrial Research (CSIR), India.",

year = "2010",

month = sep,

doi = "10.1016/j.solmat.2010.03.018",

language = "English",

volume = "94",

pages = "1473--1476",

number = "9",

}

TY - JOUR

T1 - Effect of illumination intensity on cell parameters of a silicon solar cell

AU - Khan, Firoz

AU - Singh, S. N.

AU - Husain, M.

N1 - Funding Information: The authors are thankful to Director, National Physical Laboratory, New Delhi, for his permission to publish this paper. The author Firoz Khan gratefully acknowledges the support of Council of Scientific and Industrial Research (CSIR), India.

PY - 2010/9

Y1 - 2010/9

N2 - The effect of illumination intensity Pin on the cell parameters of a silicon solar cell has been investigated based on one diode model. The variation of slopes of the IV curves of a cell at short circuit and open circuit conditions with intensity of illumination in small span of intensity has been applied to determine the cell parameters, viz. shunt resistance Rsh, series resistance Rs, diode ideality factor n and reverse saturation current I0 of the cell. The dependence of cell parameters on intensity has been investigated for a fairly wide illumination intensity range 15180 mW/cm2 of AM1.5 solar radiations by dividing this intensity range into a desirable number of small intensity ranges for measurements of the slopes of the IV curves at short circuit and open circuit conditions. Initially Rsh increases slightly with Pin and then becomes constant at higher Pin values. However, Rs, n and I0 all decrease continuously with Pin, but the rate of decrease of each of these becomes smaller at higher Pin values. Theoretical values of open circuit voltage Voc, curve factor CF and efficiency η calculated using the cell parameters determined by the present method match well with the corresponding experimental values.

AB - The effect of illumination intensity Pin on the cell parameters of a silicon solar cell has been investigated based on one diode model. The variation of slopes of the IV curves of a cell at short circuit and open circuit conditions with intensity of illumination in small span of intensity has been applied to determine the cell parameters, viz. shunt resistance Rsh, series resistance Rs, diode ideality factor n and reverse saturation current I0 of the cell. The dependence of cell parameters on intensity has been investigated for a fairly wide illumination intensity range 15180 mW/cm2 of AM1.5 solar radiations by dividing this intensity range into a desirable number of small intensity ranges for measurements of the slopes of the IV curves at short circuit and open circuit conditions. Initially Rsh increases slightly with Pin and then becomes constant at higher Pin values. However, Rs, n and I0 all decrease continuously with Pin, but the rate of decrease of each of these becomes smaller at higher Pin values. Theoretical values of open circuit voltage Voc, curve factor CF and efficiency η calculated using the cell parameters determined by the present method match well with the corresponding experimental values.

KW - Cell parameters

KW - Diode ideality factor

KW - Series resistance

KW - Shunt resistance

KW - Silicon solar cells

UR - https://www.scopus.com/pages/publications/77955418927

U2 - 10.1016/j.solmat.2010.03.018

DO - 10.1016/j.solmat.2010.03.018

M3 - Article

AN - SCOPUS:77955418927

SN - 0927-0248

VL - 94

SP - 1473

EP - 1476

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 9

ER -

Effect of illumination intensity on cell parameters of a silicon solar cell

Abstract

Bibliographical note

UN SDGs

Keywords

ASJC Scopus subject areas

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