Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers

M. Zahed M. Khan; Tien K. Ng; Boon S. Ooi

doi:10.1109/HONET.2011.6149813

Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers

M. Zahed M. Khan^*, Tien K. Ng, Boon S. Ooi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance.

Original language	English
Title of host publication	8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011
Pages	182-184
Number of pages	3
DOIs	https://doi.org/10.1109/HONET.2011.6149813
State	Published - 2011
Externally published	Yes

Publication series

Name	8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011

Keywords

Quantum-dash laser
inhomogeneous broadening
rate equation model
relaxation process

ASJC Scopus subject areas

Management of Technology and Innovation
Computer Networks and Communications

Access to Document

10.1109/HONET.2011.6149813

Cite this

Khan, M. Z. M., Ng, T. K., & Ooi, B. S. (2011). Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers. In 8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011 (pp. 182-184). Article 6149813 (8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011). https://doi.org/10.1109/HONET.2011.6149813

@inproceedings{b47ef001bc37477f989afe5109f89a1f,

title = "Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers",

abstract = "The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance.",

keywords = "Quantum-dash laser, inhomogeneous broadening, rate equation model, relaxation process",

author = "Khan, \{M. Zahed M.\} and Ng, \{Tien K.\} and Ooi, \{Boon S.\}",

year = "2011",

doi = "10.1109/HONET.2011.6149813",

language = "English",

isbn = "9781457711695",

series = "8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011",

pages = "182--184",

booktitle = "8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011",

}

Khan, MZM, Ng, TK & Ooi, BS 2011, Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers. in 8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011., 6149813, 8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011, pp. 182-184. https://doi.org/10.1109/HONET.2011.6149813

Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers. / Khan, M. Zahed M.; Ng, Tien K.; Ooi, Boon S.
8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011. 2011. p. 182-184 6149813 (8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers

AU - Khan, M. Zahed M.

AU - Ng, Tien K.

AU - Ooi, Boon S.

PY - 2011

Y1 - 2011

N2 - The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance.

AB - The effect of carrier relaxation process into the quantum dash (Qdash) ground state (GS) is examined theoretically by carrier-photon rate equation model incorporating the inhomogeneous broadening. Increase in the relaxation time and the inhomogeneous broadening degrades the threshold current density. Moreover, our results show that a relaxation time of less than 2 ps gives optimum laser performance.

KW - Quantum-dash laser

KW - inhomogeneous broadening

KW - rate equation model

KW - relaxation process

UR - https://www.scopus.com/pages/publications/84863400712

U2 - 10.1109/HONET.2011.6149813

DO - 10.1109/HONET.2011.6149813

M3 - Conference contribution

AN - SCOPUS:84863400712

SN - 9781457711695

T3 - 8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011

SP - 182

EP - 184

BT - 8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011

ER -

Khan MZM, Ng TK, Ooi BS. Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers. In 8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011. 2011. p. 182-184. 6149813. (8th International Conference on High-Capacity Optical Networks and Emerging Technologies, HONET 2011). doi: 10.1109/HONET.2011.6149813

Effect of carrier relaxation lifetime on the performance of InAs/InP quantum-dash lasers

Abstract

Publication series

Keywords

ASJC Scopus subject areas

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