Abstract
In this work, a direct Z-scheme Cs2O-Bi2O3-ZnO heterostructure without any electron mediator is fabricated by a simple solution combustion route. Cs2O is chosen as a sensitizer to expand the light absorption range, and in addition, its conduction band minimum (CBM) and valence band maximum (VBM) positions are suitable to construct a direct Z-scheme system with ZnO and Bi2O3. Structural and elemental analyses show clear evidence for heterostructure formation. The Z-scheme charge carrier migration pathway in Cs2O-Bi2O3-ZnO is confirmed by high resolution XPS and ESR studies. The fabricated heterostructure exhibits a good ability to split water to H2 and O2 under simulated sunlight irradiation without any sacrificial agents or co-catalysts and has excellent photostability. The apparent quantum efficiency of the optimized Cs2O-Bi2O3-ZnO heterostructure reaches up to 0.92% at 420 nm. The excellent efficiency of this fabricated heterostructure is attributed to the efficient charge carrier separation, the high redox potential of the CBM and VBM benefiting from a direct Z-scheme charge carrier migration pathway and the extended light absorption range.
| Original language | English |
|---|---|
| Pages (from-to) | 21379-21388 |
| Number of pages | 10 |
| Journal | Journal of Materials Chemistry A |
| Volume | 6 |
| Issue number | 43 |
| DOIs | |
| State | Published - 2018 |
Bibliographical note
Publisher Copyright:© The Royal Society of Chemistry.
ASJC Scopus subject areas
- General Chemistry
- Renewable Energy, Sustainability and the Environment
- General Materials Science
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