Differential CMOS class-E RF power amplifier

Saad M. Al-Shaharani

Differential CMOS class-E RF power amplifier

Saad M. Al-Shaharani^*

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a differential CMOS class-E power amplifier that exhibits high linearity. The amplifier operates at 900 MHz from ± 2.0-V, and delivers 1-W output power with 80% drain efficiency. Simulation results show that 3rd and 5th IMD products of the proposed PA are lower than that of the conventional class-E amplifier by 18 dB and 13dB respectively.

Original language	English
Pages (from-to)	235-238
Number of pages	4
Journal	WSEAS Transactions on Circuits and Systems
Volume	6
Issue number	2
State	Published - Feb 2007

Keywords

CMOS
Class-E
Differential
Power amplifier
RF

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Differential CMOS class-E RF power amplifier",

abstract = "This paper presents a differential CMOS class-E power amplifier that exhibits high linearity. The amplifier operates at 900 MHz from ± 2.0-V, and delivers 1-W output power with 80\% drain efficiency. Simulation results show that 3rd and 5th IMD products of the proposed PA are lower than that of the conventional class-E amplifier by 18 dB and 13dB respectively.",

keywords = "CMOS, Class-E, Differential, Power amplifier, RF",

author = "Al-Shaharani, \{Saad M.\}",

year = "2007",

month = feb,

language = "English",

volume = "6",

pages = "235--238",

journal = "WSEAS Transactions on Circuits and Systems",

issn = "1109-2734",

publisher = "World Scientific and Engineering Academy and Society",

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T1 - Differential CMOS class-E RF power amplifier

AU - Al-Shaharani, Saad M.

PY - 2007/2

Y1 - 2007/2

N2 - This paper presents a differential CMOS class-E power amplifier that exhibits high linearity. The amplifier operates at 900 MHz from ± 2.0-V, and delivers 1-W output power with 80% drain efficiency. Simulation results show that 3rd and 5th IMD products of the proposed PA are lower than that of the conventional class-E amplifier by 18 dB and 13dB respectively.

AB - This paper presents a differential CMOS class-E power amplifier that exhibits high linearity. The amplifier operates at 900 MHz from ± 2.0-V, and delivers 1-W output power with 80% drain efficiency. Simulation results show that 3rd and 5th IMD products of the proposed PA are lower than that of the conventional class-E amplifier by 18 dB and 13dB respectively.

KW - CMOS

KW - Class-E

KW - Differential

KW - Power amplifier

KW - RF

UR - https://www.scopus.com/pages/publications/34248335513

M3 - Article

AN - SCOPUS:34248335513

SN - 1109-2734

VL - 6

SP - 235

EP - 238

JO - WSEAS Transactions on Circuits and Systems

JF - WSEAS Transactions on Circuits and Systems

IS - 2

ER -

Differential CMOS class-E RF power amplifier

Abstract

Keywords

ASJC Scopus subject areas

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