Difference between bulk and thin film densities of metal oxide and fluoride films studied by NRA depth profiling techniques

A. Coban; E. E. Khawaja; S. M.A. Durrani

doi:10.1016/S0168-583X(02)00670-5

Difference between bulk and thin film densities of metal oxide and fluoride films studied by NRA depth profiling techniques

A. Coban^*
, E. E. Khawaja
, S. M.A. Durrani

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Nuclear reaction analysis techniques have been used to study the difference between bulk and thin film densities of different dielectric (WO₃, MgF₂, NdF₃, LaF₃ and ThF₄) thin films. Thicknesses of the films were measured by optical methods. The ^18O(p,α)¹⁵N reaction was used at 730 keV to profile WO₃ prepared with different thicknesses on a tantalum backing by thermal evaporation of natural WO₃. We have also successfully tested the ¹⁸O(p,α)¹⁵N reaction at the 629 keV (Γ = 2.1 keV) resonance for the same purpose. Excitation function measurements of the reaction was performed around the resonant energy at a detection angle of 150°. In order to obtain the oxygen profiles of the thin films non-resonant part of the excitation function was deconvoluted using the known cross-section data of the reaction. Also, we studied different films of MgF₂, NdF₃, LaF₃ and ThF₄ using the 483.85 keV resonance in the ¹⁹F(p,αγ)^16O reaction.

Original language	English
Pages (from-to)	171-176
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	194
Issue number	2
DOIs	https://doi.org/10.1016/S0168-583X(02)00670-5
State	Published - Aug 2002

Bibliographical note

Funding Information:
The support of Center for Applied Physical Sciences of the KFUPM Research Institute for this work is gratefully acknowledged. The authors are also grateful for the assistance of M.A. Al-Daous and Mr. S. Madhusoodhanan Pillai.

Keywords

Bulk density
Film density
NRA resonant depth profiling
Thin film

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/S0168-583X(02)00670-5

Cite this

@article{41284e28df644df093ff3ad62d97222c,

title = "Difference between bulk and thin film densities of metal oxide and fluoride films studied by NRA depth profiling techniques",

abstract = "Nuclear reaction analysis techniques have been used to study the difference between bulk and thin film densities of different dielectric (WO3, MgF2, NdF3, LaF3 and ThF4) thin films. Thicknesses of the films were measured by optical methods. The 18O(p,α)15N reaction was used at 730 keV to profile WO3 prepared with different thicknesses on a tantalum backing by thermal evaporation of natural WO3. We have also successfully tested the 18O(p,α)15N reaction at the 629 keV (Γ = 2.1 keV) resonance for the same purpose. Excitation function measurements of the reaction was performed around the resonant energy at a detection angle of 150°. In order to obtain the oxygen profiles of the thin films non-resonant part of the excitation function was deconvoluted using the known cross-section data of the reaction. Also, we studied different films of MgF2, NdF3, LaF3 and ThF4 using the 483.85 keV resonance in the 19F(p,αγ)16O reaction.",

keywords = "Bulk density, Film density, NRA resonant depth profiling, Thin film",

author = "A. Coban and Khawaja, \{E. E.\} and Durrani, \{S. M.A.\}",

note = "Funding Information: The support of Center for Applied Physical Sciences of the KFUPM Research Institute for this work is gratefully acknowledged. The authors are also grateful for the assistance of M.A. Al-Daous and Mr. S. Madhusoodhanan Pillai. ",

year = "2002",

month = aug,

doi = "10.1016/S0168-583X(02)00670-5",

language = "English",

volume = "194",

pages = "171--176",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

number = "2",

}

Difference between bulk and thin film densities of metal oxide and fluoride films studied by NRA depth profiling techniques. / Coban, A.; Khawaja, E. E.; Durrani, S. M.A.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 194, No. 2, 08.2002, p. 171-176.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Difference between bulk and thin film densities of metal oxide and fluoride films studied by NRA depth profiling techniques

AU - Coban, A.

AU - Khawaja, E. E.

AU - Durrani, S. M.A.

N1 - Funding Information: The support of Center for Applied Physical Sciences of the KFUPM Research Institute for this work is gratefully acknowledged. The authors are also grateful for the assistance of M.A. Al-Daous and Mr. S. Madhusoodhanan Pillai.

PY - 2002/8

Y1 - 2002/8

N2 - Nuclear reaction analysis techniques have been used to study the difference between bulk and thin film densities of different dielectric (WO3, MgF2, NdF3, LaF3 and ThF4) thin films. Thicknesses of the films were measured by optical methods. The 18O(p,α)15N reaction was used at 730 keV to profile WO3 prepared with different thicknesses on a tantalum backing by thermal evaporation of natural WO3. We have also successfully tested the 18O(p,α)15N reaction at the 629 keV (Γ = 2.1 keV) resonance for the same purpose. Excitation function measurements of the reaction was performed around the resonant energy at a detection angle of 150°. In order to obtain the oxygen profiles of the thin films non-resonant part of the excitation function was deconvoluted using the known cross-section data of the reaction. Also, we studied different films of MgF2, NdF3, LaF3 and ThF4 using the 483.85 keV resonance in the 19F(p,αγ)16O reaction.

AB - Nuclear reaction analysis techniques have been used to study the difference between bulk and thin film densities of different dielectric (WO3, MgF2, NdF3, LaF3 and ThF4) thin films. Thicknesses of the films were measured by optical methods. The 18O(p,α)15N reaction was used at 730 keV to profile WO3 prepared with different thicknesses on a tantalum backing by thermal evaporation of natural WO3. We have also successfully tested the 18O(p,α)15N reaction at the 629 keV (Γ = 2.1 keV) resonance for the same purpose. Excitation function measurements of the reaction was performed around the resonant energy at a detection angle of 150°. In order to obtain the oxygen profiles of the thin films non-resonant part of the excitation function was deconvoluted using the known cross-section data of the reaction. Also, we studied different films of MgF2, NdF3, LaF3 and ThF4 using the 483.85 keV resonance in the 19F(p,αγ)16O reaction.

KW - Bulk density

KW - Film density

KW - NRA resonant depth profiling

KW - Thin film

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 2

ER -

Difference between bulk and thin film densities of metal oxide and fluoride films studied by NRA depth profiling techniques

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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