Developments in AlGaN and UV-C LEDs grown on SiC

Burhan Saifaddin; Christian J. Zollner; Abdullah Almogbel; Humberto Foronda; Feng Wu; Abdulrahman Albadri; Ahmed Al Yamani; Michael Iza; Shuji Nakamura; Steven P. Denbaars; James S. Speck

doi:10.1117/12.2317660

Developments in AlGaN and UV-C LEDs grown on SiC

Burhan Saifaddin
, Christian J. Zollner
, Abdullah Almogbel
, Humberto Foronda
, Feng Wu
, Abdulrahman Albadri
, Ahmed Al Yamani
, Michael Iza
, Shuji Nakamura
, Steven P. Denbaars
, James S. Speck

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

11 Scopus citations

Abstract

AlGaN-based UV-C LEDs (260-300 nm) remain inefficient compared to InGaN visible LEDs due to optically absorptive layers limiting light extraction, optical polarization, and poor material quality. Sapphire, the most popular substrate material, is transparent and inexpensive but has many disadvantages in material quality and device performance. In contrast, SiC has small lattice mismatch with AlN (∼1%), similar crystal structure, more chemically stable and contains no oxygen, which degrades the IQE and compensates holes. We report low threading dislocations density (TDD) AlN on SiC (TDD < 7x10⁸cm^-2) by metalorganic chemical vapor deposition (MOCVD). We demonstrate innovative thin-film flipchip (TFFC) LEDs with 7.8 mW at 95 mA at 278.5 nm grown on AlN/SiC with TDD∼1x10⁹ cm^-2. (Respectively, EQE and WPE are 1.8% and 0.6%.) We also demonstrate that KOH roughening does not impact the IV voltage of TFFC LED. KOH roughening enhanced the light extraction efficiency (LEE) by 100% and ∼180% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively.

Original language	English
Title of host publication	Light-Emitting Diodes
Subtitle of host publication	Materials, Devices, and Applications for Solid State Lighting XXII
Editors	Michael R. Krames, Martin Strassburg, Li-Wei Tu, Jong Kyu Kim
Publisher	SPIE
ISBN (Electronic)	9781510615939
DOIs	https://doi.org/10.1117/12.2317660
State	Published - 2018
Externally published	Yes

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10554
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Bibliographical note

Publisher Copyright:
© 2018 SPIE.

Keywords

AlN buffer layer technology on SiC
KOH roughening
MOCVD
Thin-film AlGaN LED
light extraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2317660

Cite this

Saifaddin, B., Zollner, C. J., Almogbel, A., Foronda, H., Wu, F., Albadri, A., Al Yamani, A., Iza, M., Nakamura, S., Denbaars, S. P., & Speck, J. S. (2018). Developments in AlGaN and UV-C LEDs grown on SiC. In M. R. Krames, M. Strassburg, L.-W. Tu, & J. K. Kim (Eds.), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII Article 105541E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10554). SPIE. https://doi.org/10.1117/12.2317660

Saifaddin, Burhan ; Zollner, Christian J. ; Almogbel, Abdullah et al. / Developments in AlGaN and UV-C LEDs grown on SiC. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII. editor / Michael R. Krames ; Martin Strassburg ; Li-Wei Tu ; Jong Kyu Kim. SPIE, 2018. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{372f19be24fe4f0fb08ef42e3d761521,

title = "Developments in AlGaN and UV-C LEDs grown on SiC",

abstract = "AlGaN-based UV-C LEDs (260-300 nm) remain inefficient compared to InGaN visible LEDs due to optically absorptive layers limiting light extraction, optical polarization, and poor material quality. Sapphire, the most popular substrate material, is transparent and inexpensive but has many disadvantages in material quality and device performance. In contrast, SiC has small lattice mismatch with AlN (∼1\%), similar crystal structure, more chemically stable and contains no oxygen, which degrades the IQE and compensates holes. We report low threading dislocations density (TDD) AlN on SiC (TDD < 7x108cm-2) by metalorganic chemical vapor deposition (MOCVD). We demonstrate innovative thin-film flipchip (TFFC) LEDs with 7.8 mW at 95 mA at 278.5 nm grown on AlN/SiC with TDD∼1x109 cm-2. (Respectively, EQE and WPE are 1.8\% and 0.6\%.) We also demonstrate that KOH roughening does not impact the IV voltage of TFFC LED. KOH roughening enhanced the light extraction efficiency (LEE) by 100\% and ∼180\% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively.",

keywords = "AlN buffer layer technology on SiC, KOH roughening, MOCVD, Thin-film AlGaN LED, light extraction",

author = "Burhan Saifaddin and Zollner, \{Christian J.\} and Abdullah Almogbel and Humberto Foronda and Feng Wu and Abdulrahman Albadri and \{Al Yamani\}, Ahmed and Michael Iza and Shuji Nakamura and Denbaars, \{Steven P.\} and Speck, \{James S.\}",

note = "Publisher Copyright: {\textcopyright} 2018 SPIE.",

year = "2018",

doi = "10.1117/12.2317660",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Krames, \{Michael R.\} and Martin Strassburg and Li-Wei Tu and Kim, \{Jong Kyu\}",

booktitle = "Light-Emitting Diodes",

address = "United States",

}

Saifaddin, B, Zollner, CJ, Almogbel, A, Foronda, H, Wu, F, Albadri, A, Al Yamani, A, Iza, M, Nakamura, S, Denbaars, SP & Speck, JS 2018, Developments in AlGaN and UV-C LEDs grown on SiC. in MR Krames, M Strassburg, L-W Tu & JK Kim (eds), Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII., 105541E, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10554, SPIE. https://doi.org/10.1117/12.2317660

Developments in AlGaN and UV-C LEDs grown on SiC. / Saifaddin, Burhan; Zollner, Christian J.; Almogbel, Abdullah et al.
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII. ed. / Michael R. Krames; Martin Strassburg; Li-Wei Tu; Jong Kyu Kim. SPIE, 2018. 105541E (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10554).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Developments in AlGaN and UV-C LEDs grown on SiC

AU - Saifaddin, Burhan

AU - Zollner, Christian J.

AU - Almogbel, Abdullah

AU - Foronda, Humberto

AU - Wu, Feng

AU - Albadri, Abdulrahman

AU - Al Yamani, Ahmed

AU - Iza, Michael

AU - Nakamura, Shuji

AU - Denbaars, Steven P.

AU - Speck, James S.

PY - 2018

Y1 - 2018

N2 - AlGaN-based UV-C LEDs (260-300 nm) remain inefficient compared to InGaN visible LEDs due to optically absorptive layers limiting light extraction, optical polarization, and poor material quality. Sapphire, the most popular substrate material, is transparent and inexpensive but has many disadvantages in material quality and device performance. In contrast, SiC has small lattice mismatch with AlN (∼1%), similar crystal structure, more chemically stable and contains no oxygen, which degrades the IQE and compensates holes. We report low threading dislocations density (TDD) AlN on SiC (TDD < 7x108cm-2) by metalorganic chemical vapor deposition (MOCVD). We demonstrate innovative thin-film flipchip (TFFC) LEDs with 7.8 mW at 95 mA at 278.5 nm grown on AlN/SiC with TDD∼1x109 cm-2. (Respectively, EQE and WPE are 1.8% and 0.6%.) We also demonstrate that KOH roughening does not impact the IV voltage of TFFC LED. KOH roughening enhanced the light extraction efficiency (LEE) by 100% and ∼180% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively.

AB - AlGaN-based UV-C LEDs (260-300 nm) remain inefficient compared to InGaN visible LEDs due to optically absorptive layers limiting light extraction, optical polarization, and poor material quality. Sapphire, the most popular substrate material, is transparent and inexpensive but has many disadvantages in material quality and device performance. In contrast, SiC has small lattice mismatch with AlN (∼1%), similar crystal structure, more chemically stable and contains no oxygen, which degrades the IQE and compensates holes. We report low threading dislocations density (TDD) AlN on SiC (TDD < 7x108cm-2) by metalorganic chemical vapor deposition (MOCVD). We demonstrate innovative thin-film flipchip (TFFC) LEDs with 7.8 mW at 95 mA at 278.5 nm grown on AlN/SiC with TDD∼1x109 cm-2. (Respectively, EQE and WPE are 1.8% and 0.6%.) We also demonstrate that KOH roughening does not impact the IV voltage of TFFC LED. KOH roughening enhanced the light extraction efficiency (LEE) by 100% and ∼180% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively.

KW - AlN buffer layer technology on SiC

KW - KOH roughening

KW - MOCVD

KW - Thin-film AlGaN LED

KW - light extraction

UR - https://www.scopus.com/pages/publications/85047824706

U2 - 10.1117/12.2317660

DO - 10.1117/12.2317660

M3 - Conference contribution

AN - SCOPUS:85047824706

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Light-Emitting Diodes

A2 - Krames, Michael R.

A2 - Strassburg, Martin

A2 - Tu, Li-Wei

A2 - Kim, Jong Kyu

PB - SPIE

ER -

Saifaddin B, Zollner CJ, Almogbel A, Foronda H, Wu F, Albadri A et al. Developments in AlGaN and UV-C LEDs grown on SiC. In Krames MR, Strassburg M, Tu LW, Kim JK, editors, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII. SPIE. 2018. 105541E. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2317660

Developments in AlGaN and UV-C LEDs grown on SiC

Abstract

Publication series

Bibliographical note

Keywords

ASJC Scopus subject areas

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