Determination of the diode parameters of a-Si and CdTe solar modules using variation of the intensity of illumination: An application

Firoz Khan; S. N. Singh; M. Husain

doi:10.1016/j.solener.2011.06.016

Determination of the diode parameters of a-Si and CdTe solar modules using variation of the intensity of illumination: An application

Firoz Khan^*
, S. N. Singh
, M. Husain

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

An attempt has been made for the determination of diode parameters viz. shunt resistance R_sh, series resistance R_s, diode ideality factor n and reverse saturation current density J₀ of three solar modules: a-Si 47-37, a-Si 51-13 and CdTe 14407. In this regard, two approaches namely (A) and (B) reported by Khan et al. (2010) have been used to determine all the four diode parameters R_sh, R_s, n and J₀. The data of slopes of J-V curve at open circuit conditions (m_oc) and open circuit voltage (V_oc) at different illumination intensities obtained by Del Cueto (1998) for two a-Si and one CdTe solar modules have been used to determine the above diode parameters. The determined values of diode parameters have been used to generate the theoretical J-V curves. The theoretical fill factor (FF) and V_oc have been calculated from the theoretical J-V curves and are plotted along with the experimental FF and V_oc values. The theoretical values of FF and V_oc obtained by the approach (B) of method of Khan et al. (2010) are in good agreement with the experimental values.

Original language	English
Pages (from-to)	2288-2294
Number of pages	7
Journal	Solar Energy
Volume	85
Issue number	9
DOIs	https://doi.org/10.1016/j.solener.2011.06.016
State	Published - Sep 2011
Externally published	Yes

Bibliographical note

Funding Information:
The authors are thankful to Prof. R.C. Budhani, Director, National Physical Laboratory, New Delhi, for his kind permission to publish the reported research work. The author F. Khan gratefully acknowledges the financial support of Council of Scientific & Industrial Research (CSIR), India.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

A-Si solar modules
CdTe solar modules
Diode ideality factor
Reverse saturation current density
Series resistance
Shunt resistance

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
General Materials Science

Access to Document

10.1016/j.solener.2011.06.016

Cite this

@article{7772f549af7941709127493d39b4c1f1,

title = "Determination of the diode parameters of a-Si and CdTe solar modules using variation of the intensity of illumination: An application",

abstract = "An attempt has been made for the determination of diode parameters viz. shunt resistance Rsh, series resistance Rs, diode ideality factor n and reverse saturation current density J0 of three solar modules: a-Si 47-37, a-Si 51-13 and CdTe 14407. In this regard, two approaches namely (A) and (B) reported by Khan et al. (2010) have been used to determine all the four diode parameters Rsh, Rs, n and J0. The data of slopes of J-V curve at open circuit conditions (moc) and open circuit voltage (Voc) at different illumination intensities obtained by Del Cueto (1998) for two a-Si and one CdTe solar modules have been used to determine the above diode parameters. The determined values of diode parameters have been used to generate the theoretical J-V curves. The theoretical fill factor (FF) and Voc have been calculated from the theoretical J-V curves and are plotted along with the experimental FF and Voc values. The theoretical values of FF and Voc obtained by the approach (B) of method of Khan et al. (2010) are in good agreement with the experimental values.",

keywords = "A-Si solar modules, CdTe solar modules, Diode ideality factor, Reverse saturation current density, Series resistance, Shunt resistance",

author = "Firoz Khan and Singh, \{S. N.\} and M. Husain",

note = "Funding Information: The authors are thankful to Prof. R.C. Budhani, Director, National Physical Laboratory, New Delhi, for his kind permission to publish the reported research work. The author F. Khan gratefully acknowledges the financial support of Council of Scientific \& Industrial Research (CSIR), India. ",

year = "2011",

month = sep,

doi = "10.1016/j.solener.2011.06.016",

language = "English",

volume = "85",

pages = "2288--2294",

journal = "Solar Energy",

issn = "0038-092X",

publisher = "Elsevier Ltd.",

number = "9",

}

TY - JOUR

T1 - Determination of the diode parameters of a-Si and CdTe solar modules using variation of the intensity of illumination

T2 - An application

AU - Khan, Firoz

AU - Singh, S. N.

AU - Husain, M.

N1 - Funding Information: The authors are thankful to Prof. R.C. Budhani, Director, National Physical Laboratory, New Delhi, for his kind permission to publish the reported research work. The author F. Khan gratefully acknowledges the financial support of Council of Scientific & Industrial Research (CSIR), India.

PY - 2011/9

Y1 - 2011/9

N2 - An attempt has been made for the determination of diode parameters viz. shunt resistance Rsh, series resistance Rs, diode ideality factor n and reverse saturation current density J0 of three solar modules: a-Si 47-37, a-Si 51-13 and CdTe 14407. In this regard, two approaches namely (A) and (B) reported by Khan et al. (2010) have been used to determine all the four diode parameters Rsh, Rs, n and J0. The data of slopes of J-V curve at open circuit conditions (moc) and open circuit voltage (Voc) at different illumination intensities obtained by Del Cueto (1998) for two a-Si and one CdTe solar modules have been used to determine the above diode parameters. The determined values of diode parameters have been used to generate the theoretical J-V curves. The theoretical fill factor (FF) and Voc have been calculated from the theoretical J-V curves and are plotted along with the experimental FF and Voc values. The theoretical values of FF and Voc obtained by the approach (B) of method of Khan et al. (2010) are in good agreement with the experimental values.

AB - An attempt has been made for the determination of diode parameters viz. shunt resistance Rsh, series resistance Rs, diode ideality factor n and reverse saturation current density J0 of three solar modules: a-Si 47-37, a-Si 51-13 and CdTe 14407. In this regard, two approaches namely (A) and (B) reported by Khan et al. (2010) have been used to determine all the four diode parameters Rsh, Rs, n and J0. The data of slopes of J-V curve at open circuit conditions (moc) and open circuit voltage (Voc) at different illumination intensities obtained by Del Cueto (1998) for two a-Si and one CdTe solar modules have been used to determine the above diode parameters. The determined values of diode parameters have been used to generate the theoretical J-V curves. The theoretical fill factor (FF) and Voc have been calculated from the theoretical J-V curves and are plotted along with the experimental FF and Voc values. The theoretical values of FF and Voc obtained by the approach (B) of method of Khan et al. (2010) are in good agreement with the experimental values.

KW - A-Si solar modules

KW - CdTe solar modules

KW - Diode ideality factor

KW - Reverse saturation current density

KW - Series resistance

KW - Shunt resistance

UR - https://www.scopus.com/pages/publications/80051588492

U2 - 10.1016/j.solener.2011.06.016

DO - 10.1016/j.solener.2011.06.016

M3 - Article

AN - SCOPUS:80051588492

SN - 0038-092X

VL - 85

SP - 2288

EP - 2294

JO - Solar Energy

JF - Solar Energy

IS - 9

ER -

Determination of the diode parameters of a-Si and CdTe solar modules using variation of the intensity of illumination: An application

Abstract

Bibliographical note

UN SDGs

Keywords

ASJC Scopus subject areas

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