Design for linearizability of GaN based multi-carrier Doherty power amplifier through bias optimization

Oualid Hammi; Sung Chan Jung; Fadhel M. Ghannouchi

doi:10.1109/ICECS.2012.6463701

Design for linearizability of GaN based multi-carrier Doherty power amplifier through bias optimization

Oualid Hammi^*
, Sung Chan Jung
, Fadhel M. Ghannouchi

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

In this paper, a GaN based symmetrical Doherty power amplifier is designed. The Doherty amplifier bias conditions are optimized for a trade-off between power added efficiency and linearity. The carrier amplifier is biased for linearity and the peaking amplifier bias is chosen for maximum power added efficiency. Measurement results under a four carrier WCDMA drive signal show respectively 43% power added efficiency and -32.5dBc adjacent channel leakage ratio at 6dB output power back-off. Linearization of the designed Doherty PA using baseband digital predistortion led to quasi perfect cancellation of spectrum regrowth while operating at an output power back-off equal to the input signal's peak to average power ratio.

Original language	English
Title of host publication	2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012
Pages	492-495
Number of pages	4
DOIs	https://doi.org/10.1109/ICECS.2012.6463701
State	Published - 2012

Publication series

Name	2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ICECS.2012.6463701

Cite this

Hammi, O., Jung, S. C., & Ghannouchi, F. M. (2012). Design for linearizability of GaN based multi-carrier Doherty power amplifier through bias optimization. In 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 (pp. 492-495). Article 6463701 (2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012). https://doi.org/10.1109/ICECS.2012.6463701

@inproceedings{ae251b077d384d9994b7f65eaddd754c,

title = "Design for linearizability of GaN based multi-carrier Doherty power amplifier through bias optimization",

abstract = "In this paper, a GaN based symmetrical Doherty power amplifier is designed. The Doherty amplifier bias conditions are optimized for a trade-off between power added efficiency and linearity. The carrier amplifier is biased for linearity and the peaking amplifier bias is chosen for maximum power added efficiency. Measurement results under a four carrier WCDMA drive signal show respectively 43\% power added efficiency and -32.5dBc adjacent channel leakage ratio at 6dB output power back-off. Linearization of the designed Doherty PA using baseband digital predistortion led to quasi perfect cancellation of spectrum regrowth while operating at an output power back-off equal to the input signal's peak to average power ratio.",

author = "Oualid Hammi and Jung, \{Sung Chan\} and Ghannouchi, \{Fadhel M.\}",

year = "2012",

doi = "10.1109/ICECS.2012.6463701",

language = "English",

isbn = "9781467312615",

series = "2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012",

pages = "492--495",

booktitle = "2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012",

}

Hammi, O, Jung, SC & Ghannouchi, FM 2012, Design for linearizability of GaN based multi-carrier Doherty power amplifier through bias optimization. in 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012., 6463701, 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012, pp. 492-495. https://doi.org/10.1109/ICECS.2012.6463701

Design for linearizability of GaN based multi-carrier Doherty power amplifier through bias optimization. / Hammi, Oualid; Jung, Sung Chan; Ghannouchi, Fadhel M.
2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. 2012. p. 492-495 6463701 (2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design for linearizability of GaN based multi-carrier Doherty power amplifier through bias optimization

AU - Hammi, Oualid

AU - Jung, Sung Chan

AU - Ghannouchi, Fadhel M.

PY - 2012

Y1 - 2012

N2 - In this paper, a GaN based symmetrical Doherty power amplifier is designed. The Doherty amplifier bias conditions are optimized for a trade-off between power added efficiency and linearity. The carrier amplifier is biased for linearity and the peaking amplifier bias is chosen for maximum power added efficiency. Measurement results under a four carrier WCDMA drive signal show respectively 43% power added efficiency and -32.5dBc adjacent channel leakage ratio at 6dB output power back-off. Linearization of the designed Doherty PA using baseband digital predistortion led to quasi perfect cancellation of spectrum regrowth while operating at an output power back-off equal to the input signal's peak to average power ratio.

AB - In this paper, a GaN based symmetrical Doherty power amplifier is designed. The Doherty amplifier bias conditions are optimized for a trade-off between power added efficiency and linearity. The carrier amplifier is biased for linearity and the peaking amplifier bias is chosen for maximum power added efficiency. Measurement results under a four carrier WCDMA drive signal show respectively 43% power added efficiency and -32.5dBc adjacent channel leakage ratio at 6dB output power back-off. Linearization of the designed Doherty PA using baseband digital predistortion led to quasi perfect cancellation of spectrum regrowth while operating at an output power back-off equal to the input signal's peak to average power ratio.

UR - https://www.scopus.com/pages/publications/84874618315

U2 - 10.1109/ICECS.2012.6463701

DO - 10.1109/ICECS.2012.6463701

M3 - Conference contribution

AN - SCOPUS:84874618315

SN - 9781467312615

T3 - 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012

SP - 492

EP - 495

BT - 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012

ER -

Hammi O, Jung SC, Ghannouchi FM. Design for linearizability of GaN based multi-carrier Doherty power amplifier through bias optimization. In 2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012. 2012. p. 492-495. 6463701. (2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012). doi: 10.1109/ICECS.2012.6463701

Design for linearizability of GaN based multi-carrier Doherty power amplifier through bias optimization

Abstract

Publication series

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this