Abstract
This paper presents the design and development of a C-Band microwave amplifier for wireless application operating at 5.8 GHz using E-pHEMT ATF-55143 transistor. The proposed design of C-band microwave amplifier has been enhanced by adding inductors between the drain, gate of the ATF-55143 transistor and DC biasing network correspondingly, which increased the maximum power gained delivered at the output port to 12.3 dB. The impedance matching network technique has been implemented in this work which helps to obtain more accurate matching. The proposed C-band microwave amplifier biased at a Vds of 2 V and Id of 20 mA. The proposed C-Band microwave amplifier was designed and simulated using Advanced Design system (ADS) software produced by Agilent. The measurement result is comparable to the simulation's result which is accomplishing the minimum requirements of the microwave power amplifier to be functioning properly.
| Original language | English |
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| Title of host publication | ISTT 2014 - 2014 IEEE 2nd International Symposium on Telecommunication Technologies |
| Editors | Mahamod Ismail, Nordin Ramli |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 404-407 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781479959822 |
| DOIs | |
| State | Published - 2 Sep 2015 |
| Externally published | Yes |
| Event | 2nd IEEE International Symposium on Telecommunication Technologies, ISTT 2014 - Langkawi, Malaysia Duration: 24 Nov 2014 → 26 Nov 2014 |
Publication series
| Name | ISTT 2014 - 2014 IEEE 2nd International Symposium on Telecommunication Technologies |
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Conference
| Conference | 2nd IEEE International Symposium on Telecommunication Technologies, ISTT 2014 |
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| Country/Territory | Malaysia |
| City | Langkawi |
| Period | 24/11/14 → 26/11/14 |
Bibliographical note
Publisher Copyright:© 2014 IEEE.
Keywords
- Amplifier
- C-Band
- DC biasing
- Matching network
- Microwave
- power gain
- stability
ASJC Scopus subject areas
- Computer Networks and Communications