Density of vapor deposited amorphous Ge films

E. E. Khawaja; S. M.A. Durrani; A. B. Hallak; M. Sakhawat Hussain

doi:10.1016/0022-3093(94)90062-0

Density of vapor deposited amorphous Ge films

E. E. Khawaja^*, S. M.A. Durrani, A. B. Hallak, M. Sakhawat Hussain

^*Corresponding author for this work

King Fahd University of Petroleum & Minerals

Research output: Contribution to journal › Letter › peer-review

6 Scopus citations

Abstract

The density of vapor-deposited amorphous Ge films (a-Ge) was determined by spectrophotometry combined with Rutherford backscattering spectroscopy. It was found to be 0.99±3% of the bulk value for crystalline Ge (c-Ge). This density is in agreement with the Lorentz-Lorenz law which, based upon the existing infrared data on the index of refraction of a-Ge, suggests that the density of a-Ge should be close (within 4%) to that of c-Ge.

Original language	English
Pages (from-to)	308-311
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	170
Issue number	3
DOIs	https://doi.org/10.1016/0022-3093(94)90062-0
State	Published - 1 Jul 1994

Bibliographical note

Funding Information:
This work is part of KFUPM/RI project LRL supported by the King Fahd University of Petroleum and Minerals.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(94)90062-0

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@article{47dad17c4059402992a93cf65e4939ba,

title = "Density of vapor deposited amorphous Ge films",

abstract = "The density of vapor-deposited amorphous Ge films (a-Ge) was determined by spectrophotometry combined with Rutherford backscattering spectroscopy. It was found to be 0.99±3\% of the bulk value for crystalline Ge (c-Ge). This density is in agreement with the Lorentz-Lorenz law which, based upon the existing infrared data on the index of refraction of a-Ge, suggests that the density of a-Ge should be close (within 4\%) to that of c-Ge.",

author = "Khawaja, \{E. E.\} and Durrani, \{S. M.A.\} and Hallak, \{A. B.\} and \{Sakhawat Hussain\}, M.",

note = "Funding Information: This work is part of KFUPM/RI project LRL supported by the King Fahd University of Petroleum and Minerals.",

year = "1994",

month = jul,

day = "1",

doi = "10.1016/0022-3093(94)90062-0",

language = "English",

volume = "170",

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journal = "Journal of Non-Crystalline Solids",

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T1 - Density of vapor deposited amorphous Ge films

AU - Khawaja, E. E.

AU - Durrani, S. M.A.

AU - Hallak, A. B.

AU - Sakhawat Hussain, M.

N1 - Funding Information: This work is part of KFUPM/RI project LRL supported by the King Fahd University of Petroleum and Minerals.

PY - 1994/7/1

Y1 - 1994/7/1

N2 - The density of vapor-deposited amorphous Ge films (a-Ge) was determined by spectrophotometry combined with Rutherford backscattering spectroscopy. It was found to be 0.99±3% of the bulk value for crystalline Ge (c-Ge). This density is in agreement with the Lorentz-Lorenz law which, based upon the existing infrared data on the index of refraction of a-Ge, suggests that the density of a-Ge should be close (within 4%) to that of c-Ge.

AB - The density of vapor-deposited amorphous Ge films (a-Ge) was determined by spectrophotometry combined with Rutherford backscattering spectroscopy. It was found to be 0.99±3% of the bulk value for crystalline Ge (c-Ge). This density is in agreement with the Lorentz-Lorenz law which, based upon the existing infrared data on the index of refraction of a-Ge, suggests that the density of a-Ge should be close (within 4%) to that of c-Ge.

UR - https://www.scopus.com/pages/publications/0028465244

U2 - 10.1016/0022-3093(94)90062-0

DO - 10.1016/0022-3093(94)90062-0

M3 - Letter

AN - SCOPUS:0028465244

SN - 0022-3093

VL - 170

SP - 308

EP - 311

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 3

ER -

Density of vapor deposited amorphous Ge films

Abstract

Bibliographical note

ASJC Scopus subject areas

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