Density of states effect on resonant tunneling

H. Bahlouli

doi:10.1016/S0038-1098(97)00089-6

Density of states effect on resonant tunneling

H. Bahlouli^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We study the effect of a gaussian type of density of states distribution on the conductance of a thin amorphous junction in the presence of localized states. The absolute value of the conductance is strongly affected by the width of the distribution but is sensitive to the center of the distribution only in the case of narrow distributions. All these effects disappear once we normalize the conductance to its zero field value.

Original language	English
Pages (from-to)	883-886
Number of pages	4
Journal	Solid State Communications
Volume	102
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1098(97)00089-6
State	Published - Jun 1997

Bibliographical note

Funding Information:
Acknowledgement--I would like to acknowledge the support provided by the Physics Department at King Fahd University of Petroleum and Minerals during the progresso f this work.

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(97)00089-6

Cite this

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title = "Density of states effect on resonant tunneling",

abstract = "We study the effect of a gaussian type of density of states distribution on the conductance of a thin amorphous junction in the presence of localized states. The absolute value of the conductance is strongly affected by the width of the distribution but is sensitive to the center of the distribution only in the case of narrow distributions. All these effects disappear once we normalize the conductance to its zero field value.",

author = "H. Bahlouli",

note = "Funding Information: Acknowledgement--I would like to acknowledge the support provided by the Physics Department at King Fahd University of Petroleum and Minerals during the progresso f this work.",

year = "1997",

month = jun,

doi = "10.1016/S0038-1098(97)00089-6",

language = "English",

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N1 - Funding Information: Acknowledgement--I would like to acknowledge the support provided by the Physics Department at King Fahd University of Petroleum and Minerals during the progresso f this work.

PY - 1997/6

Y1 - 1997/6

N2 - We study the effect of a gaussian type of density of states distribution on the conductance of a thin amorphous junction in the presence of localized states. The absolute value of the conductance is strongly affected by the width of the distribution but is sensitive to the center of the distribution only in the case of narrow distributions. All these effects disappear once we normalize the conductance to its zero field value.

AB - We study the effect of a gaussian type of density of states distribution on the conductance of a thin amorphous junction in the presence of localized states. The absolute value of the conductance is strongly affected by the width of the distribution but is sensitive to the center of the distribution only in the case of narrow distributions. All these effects disappear once we normalize the conductance to its zero field value.

UR - https://www.scopus.com/pages/publications/0031163111

U2 - 10.1016/S0038-1098(97)00089-6

DO - 10.1016/S0038-1098(97)00089-6

M3 - Article

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SN - 0038-1098

VL - 102

SP - 883

EP - 886

JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -

Density of states effect on resonant tunneling

Abstract

Bibliographical note

ASJC Scopus subject areas

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