Critical analysis of the limitations and validity of the assumptions with the analytical methods commonly used to determine the photovoltaic cell parameters

Accurate determination of the photovoltaic (PV) cell parameters is vital to predict the actual power generation capacity under different working circumstances. With the availability of numerous methods, analytical techniques are extensively used because of their simplicity, quickness, and accuracy. The analytical methods are not without limitation, which often arises due to the various assumptions and operating conditions. For benchmarking purposes, a critical analysis of the limitations and validity of the assumptions is needed to help researchers to select the most suitable and reliable method to access the PV systems and produce reliable data on the electricity production capacity. In this regard, various limitations and the validity of assumptions associated with the commonly used analytical methods have been discussed, critically analyzed, and assessed for their compatibility in different types of PV devices. Furthermore, the assumptions of the methods are examined for single-junction silicon PV cell, InGaP/GaAs/Ge multi-junction PV cell, and single-junction silicon PV module (for various damped-heat dose). The assumptions of most of the analytical methods are well valid for the Si PV cell up to the illumination level of 5 suns. However, these assumptions are found invalid for the degraded PV module. Under normal illumination, the methods based on multiple I–V curves are found to provide more accurate PV cell parameters. However, the methods based on single I–V curve are suitable at higher illumination conditions.