Coulomb correlations of resonant tunnelling in nis junctions

Hocine Bahlouli

doi:10.1088/0953-2048/8/12/009

Coulomb correlations of resonant tunnelling in nis junctions

Hocine Bahlouli^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The conductance of a normal-insulator-superconductor (NIS) tunnel junction containing a single impurity localized state in the barrier region is studied. Due to the presence of a strong on-site Coulomb interaction two electrons cannot tunnel simultaneously through the impurity centre. This correlation leads to a strong dependence of the zero-bias conductance on the applied magnetic field.

Original language	English
Pages (from-to)	900-903
Number of pages	4
Journal	Superconductor Science and Technology
Volume	8
Issue number	12
DOIs	https://doi.org/10.1088/0953-2048/8/12/009
State	Published - Dec 1995

ASJC Scopus subject areas

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0953-2048/8/12/009

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title = "Coulomb correlations of resonant tunnelling in nis junctions",

abstract = "The conductance of a normal-insulator-superconductor (NIS) tunnel junction containing a single impurity localized state in the barrier region is studied. Due to the presence of a strong on-site Coulomb interaction two electrons cannot tunnel simultaneously through the impurity centre. This correlation leads to a strong dependence of the zero-bias conductance on the applied magnetic field.",

author = "Hocine Bahlouli",

year = "1995",

month = dec,

doi = "10.1088/0953-2048/8/12/009",

language = "English",

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AU - Bahlouli, Hocine

PY - 1995/12

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N2 - The conductance of a normal-insulator-superconductor (NIS) tunnel junction containing a single impurity localized state in the barrier region is studied. Due to the presence of a strong on-site Coulomb interaction two electrons cannot tunnel simultaneously through the impurity centre. This correlation leads to a strong dependence of the zero-bias conductance on the applied magnetic field.

AB - The conductance of a normal-insulator-superconductor (NIS) tunnel junction containing a single impurity localized state in the barrier region is studied. Due to the presence of a strong on-site Coulomb interaction two electrons cannot tunnel simultaneously through the impurity centre. This correlation leads to a strong dependence of the zero-bias conductance on the applied magnetic field.

UR - https://www.scopus.com/pages/publications/0029514589

U2 - 10.1088/0953-2048/8/12/009

DO - 10.1088/0953-2048/8/12/009

M3 - Article

AN - SCOPUS:0029514589

SN - 0953-2048

VL - 8

SP - 900

EP - 903

JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

IS - 12

ER -

Coulomb correlations of resonant tunnelling in nis junctions

Abstract

ASJC Scopus subject areas

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