Corrigendum to “Bandgap energy prediction of senary zincblende III-V semiconductor compounds using machine learning” [Mater. Sci. Semicond. Process. 161 (2023) 107461] (Materials Science in Semiconductor Processing (2023) 161, (S1369800123001543), (10.1016/j.mssp.2023.107461))

  • Mohammed Alsalman
  • , Saad M. Alqahtani
  • , Fahhad H. Alharbi*
  • *Corresponding author for this work

Research output: Contribution to journalComment/debate

Abstract

The authors regret a typo error in the original paper. The error appeared in the Results and Discussion section on Page 4 for the molar fraction formula for “AlGaInP”. The formula written is AlxGa(1-x)In0.5P while the correct formula should be (AlxGa(1-x))0.5In0.5P. The error occurred in. - Fig. 4b. (the text form in the figure), [Figure presented] - The corresponding caption of Fig. 4b.: “(b) AlxGa(1-x)In0.5P, the experimental data are shown in the green circles”,- The third paragraph on Page 4 “To ensure the robustness and transferability of the two complementary ML models, they were tested against experimental results of quaternary compounds; namely AlxGayIn1−x−yAs [29,30], AlxGa(1-x)In0.5P [31,32], In(P0.69Sb0.31)1−yAsy [33] and GaxIn1−xPyAs1−y [34–36].”,- The fourth paragraph on Page 4: “The agreement is much better for all the other three cases. Fig. 4(b) shows the experimental values of [Formula presented] for AlxGa(1-x)In0.5P [31,32]”The corrected format (AlxGa(1-x))0.5In0.5P to replace the errors mentioned. - Fig. 4b. (Attached as pdf),[Figure presented] - The corresponding caption of Fig. 4b.: “(b) (AlxGa(1-x))0.5In0.5P the experimental data are shown in the green circles”,- The third paragraph on Page 4: “To ensure the robustness and transferability of the two complementary ML models, they were tested against experimental results of quaternary compounds; namely AlxGayIn1−x−yAs [29,30], (AlxGa(1-x))0.5In0.5P [31,32], In(P0.69Sb0.31)1−yAsy [33] and GaxIn1−xPyAs1−y [34–36].”,- The fourth paragraph on Page 4: “The agreement is much better for all the other three cases. Fig. 4(b) shows the experimental values of [Formula presented] for (AlxGa(1-x))0.5In0.5P [31,32]”The error does not affect the related results or the conclusion of the study. The results and simulations, and Fig. 4b correspond to the correct form, (AlxGa(1-x))0.5In0.5P, which satisfies the charge neutrality condition imposed in the calculations. The authors would like to apologise for any inconvenience caused. Also, the work is reflected on on-line application on https://cmd-ml.github.io/iiiv-zb-eg.github.io/.

Original languageEnglish
Article number109166
JournalMaterials Science in Semiconductor Processing
Volume188
DOIs
StatePublished - 15 Mar 2025

Bibliographical note

Publisher Copyright:
© 2024 Elsevier Ltd

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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