Abstract
We report a nonmonotonic dependence of electrical resistivity on Ge concentration in Cu-Ge thin-film alloys containing 0-40 at.% Ge. This behavior is corrected with structural changes occurring in the alloys as the Ge concentration is increased. The resistivity is found to remain remarkably low (typically less than 10 μΩ cm) over a range of Ge concentration extending from 25 to 35 at.%.
| Original language | English |
|---|---|
| Pages (from-to) | 1622-1624 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 63 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1993 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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