Correction to: Effect of Ni dopant on the capacitive behavior of CuS for supercapacitor application (Journal of Materials Science: Materials in Electronics, (2024), 35, 6, (445), 10.1007/s10854-024-12235-x)

Bushra Qasim; Karam Jabbour; Mohamed Ouladsmane; Muhammad Suleman Waheed; Muhammad Abdullah; Nigarish Bano; Sumaira Manzoor; Mika Sillanpää; Muhammad Naeem Ashiq

doi:10.1007/s10854-024-12576-7

Correction to: Effect of Ni dopant on the capacitive behavior of CuS for supercapacitor application (Journal of Materials Science: Materials in Electronics, (2024), 35, 6, (445), 10.1007/s10854-024-12235-x)

Bushra Qasim
, Karam Jabbour
, Mohamed Ouladsmane
, Muhammad Suleman Waheed
, Muhammad Abdullah
, Nigarish Bano
, Sumaira Manzoor
, Mika Sillanpää
, Muhammad Naeem Ashiq^*

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate

1 Scopus citations

Abstract

In the original article the affiliation details for Nigarish Bano, Sumaira Manzoor and Muhammad Naeem Ashiq were incorrectly given as Department of Chemistry, College of Science, King Saud University, 11451 Riyadh, Saudi Arabia but should have been Institute of Chemical Sciences, Bahauddin Zakariya University, Multan, Pakistan.

Original language	English
Article number	801
Journal	Journal of Materials Science: Materials in Electronics
Volume	35
Issue number	11
DOIs	https://doi.org/10.1007/s10854-024-12576-7
State	Published - Apr 2024
Externally published	Yes

Bibliographical note

Publisher Copyright:
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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Qasim, B., Jabbour, K., Ouladsmane, M., Waheed, M. S., Abdullah, M., Bano, N., Manzoor, S., Sillanpää, M., & Ashiq, M. N. (2024). Correction to: Effect of Ni dopant on the capacitive behavior of CuS for supercapacitor application (Journal of Materials Science: Materials in Electronics, (2024), 35, 6, (445), 10.1007/s10854-024-12235-x). Journal of Materials Science: Materials in Electronics, 35(11), Article 801. https://doi.org/10.1007/s10854-024-12576-7

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title = "Correction to: Effect of Ni dopant on the capacitive behavior of CuS for supercapacitor application (Journal of Materials Science: Materials in Electronics, (2024), 35, 6, (445), 10.1007/s10854-024-12235-x)",

abstract = "In the original article the affiliation details for Nigarish Bano, Sumaira Manzoor and Muhammad Naeem Ashiq were incorrectly given as Department of Chemistry, College of Science, King Saud University, 11451 Riyadh, Saudi Arabia but should have been Institute of Chemical Sciences, Bahauddin Zakariya University, Multan, Pakistan.",

author = "Bushra Qasim and Karam Jabbour and Mohamed Ouladsmane and Waheed, \{Muhammad Suleman\} and Muhammad Abdullah and Nigarish Bano and Sumaira Manzoor and Mika Sillanp{\"a}{\"a} and Ashiq, \{Muhammad Naeem\}",

note = "Publisher Copyright: {\textcopyright} The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.",

year = "2024",

month = apr,

doi = "10.1007/s10854-024-12576-7",

language = "English",

volume = "35",

journal = "Journal of Materials Science: Materials in Electronics",

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Qasim, B, Jabbour, K, Ouladsmane, M, Waheed, MS, Abdullah, M, Bano, N, Manzoor, S, Sillanpää, M & Ashiq, MN 2024, 'Correction to: Effect of Ni dopant on the capacitive behavior of CuS for supercapacitor application (Journal of Materials Science: Materials in Electronics, (2024), 35, 6, (445), 10.1007/s10854-024-12235-x)', Journal of Materials Science: Materials in Electronics, vol. 35, no. 11, 801. https://doi.org/10.1007/s10854-024-12576-7

Correction to: Effect of Ni dopant on the capacitive behavior of CuS for supercapacitor application (Journal of Materials Science: Materials in Electronics, (2024), 35, 6, (445), 10.1007/s10854-024-12235-x). / Qasim, Bushra; Jabbour, Karam; Ouladsmane, Mohamed et al.
In: Journal of Materials Science: Materials in Electronics, Vol. 35, No. 11, 801, 04.2024.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Correction to

T2 - Effect of Ni dopant on the capacitive behavior of CuS for supercapacitor application (Journal of Materials Science: Materials in Electronics, (2024), 35, 6, (445), 10.1007/s10854-024-12235-x)

AU - Qasim, Bushra

AU - Jabbour, Karam

AU - Ouladsmane, Mohamed

AU - Waheed, Muhammad Suleman

AU - Abdullah, Muhammad

AU - Bano, Nigarish

AU - Manzoor, Sumaira

AU - Sillanpää, Mika

AU - Ashiq, Muhammad Naeem

N1 - Publisher Copyright: © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.

PY - 2024/4

Y1 - 2024/4

N2 - In the original article the affiliation details for Nigarish Bano, Sumaira Manzoor and Muhammad Naeem Ashiq were incorrectly given as Department of Chemistry, College of Science, King Saud University, 11451 Riyadh, Saudi Arabia but should have been Institute of Chemical Sciences, Bahauddin Zakariya University, Multan, Pakistan.

AB - In the original article the affiliation details for Nigarish Bano, Sumaira Manzoor and Muhammad Naeem Ashiq were incorrectly given as Department of Chemistry, College of Science, King Saud University, 11451 Riyadh, Saudi Arabia but should have been Institute of Chemical Sciences, Bahauddin Zakariya University, Multan, Pakistan.

UR - https://www.scopus.com/pages/publications/85190701386

U2 - 10.1007/s10854-024-12576-7

DO - 10.1007/s10854-024-12576-7

M3 - Comment/debate

AN - SCOPUS:85190701386

SN - 0957-4522

VL - 35

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 11

M1 - 801

ER -

Qasim B, Jabbour K, Ouladsmane M, Waheed MS, Abdullah M, Bano N et al. Correction to: Effect of Ni dopant on the capacitive behavior of CuS for supercapacitor application (Journal of Materials Science: Materials in Electronics, (2024), 35, 6, (445), 10.1007/s10854-024-12235-x). Journal of Materials Science: Materials in Electronics. 2024 Apr;35(11):801. doi: 10.1007/s10854-024-12576-7