CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns

G. Gay; T. Baron; C. Agraffeil; B. Salhi; T. Chevolleau; G. Cunge; H. Grampeix; J. H. Tortai; F. Martin; E. Jalaguier; B. De Salvo

doi:10.1088/0957-4484/21/43/435301

CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns

G. Gay^*, T. Baron, C. Agraffeil, B. Salhi, T. Chevolleau, G. Cunge, H. Grampeix, J. H. Tortai, F. Martin, E. Jalaguier, B. De Salvo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

A generic, CMOS compatible strategy for transferring a block copolymer template to a semiconductor substrate is demonstrated. An aluminum oxide (Al₂O₃) hard mask is selectively deposited by atomic layer deposition in an organized array of holes obtained in a PS matrix via PS-b-PMMA self-assembly. The Al₂O₃ nanodots act as a highly resistant mask to plasma etching, and are used to pattern high aspect ratio (>10) silicon nanowires and nanopillars.

Original language	English
Article number	435301
Journal	Nanotechnology
Volume	21
Issue number	43
DOIs	https://doi.org/10.1088/0957-4484/21/43/435301
State	Published - 29 Oct 2010
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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Gay, G., Baron, T., Agraffeil, C., Salhi, B., Chevolleau, T., Cunge, G., Grampeix, H., Tortai, J. H., Martin, F., Jalaguier, E., & De Salvo, B. (2010). CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns. Nanotechnology, 21(43), Article 435301. https://doi.org/10.1088/0957-4484/21/43/435301

@article{6248a39abc0f45559edce509447ad667,

title = "CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns",

abstract = "A generic, CMOS compatible strategy for transferring a block copolymer template to a semiconductor substrate is demonstrated. An aluminum oxide (Al2O3) hard mask is selectively deposited by atomic layer deposition in an organized array of holes obtained in a PS matrix via PS-b-PMMA self-assembly. The Al2O3 nanodots act as a highly resistant mask to plasma etching, and are used to pattern high aspect ratio (>10) silicon nanowires and nanopillars.",

author = "G. Gay and T. Baron and C. Agraffeil and B. Salhi and T. Chevolleau and G. Cunge and H. Grampeix and Tortai, \{J. H.\} and F. Martin and E. Jalaguier and \{De Salvo\}, B.",

year = "2010",

month = oct,

day = "29",

doi = "10.1088/0957-4484/21/43/435301",

language = "English",

volume = "21",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "43",

}

TY - JOUR

T1 - CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns

AU - Gay, G.

AU - Baron, T.

AU - Agraffeil, C.

AU - Salhi, B.

AU - Chevolleau, T.

AU - Cunge, G.

AU - Grampeix, H.

AU - Tortai, J. H.

AU - Martin, F.

AU - Jalaguier, E.

AU - De Salvo, B.

PY - 2010/10/29

Y1 - 2010/10/29

N2 - A generic, CMOS compatible strategy for transferring a block copolymer template to a semiconductor substrate is demonstrated. An aluminum oxide (Al2O3) hard mask is selectively deposited by atomic layer deposition in an organized array of holes obtained in a PS matrix via PS-b-PMMA self-assembly. The Al2O3 nanodots act as a highly resistant mask to plasma etching, and are used to pattern high aspect ratio (>10) silicon nanowires and nanopillars.

AB - A generic, CMOS compatible strategy for transferring a block copolymer template to a semiconductor substrate is demonstrated. An aluminum oxide (Al2O3) hard mask is selectively deposited by atomic layer deposition in an organized array of holes obtained in a PS matrix via PS-b-PMMA self-assembly. The Al2O3 nanodots act as a highly resistant mask to plasma etching, and are used to pattern high aspect ratio (>10) silicon nanowires and nanopillars.

UR - https://www.scopus.com/pages/publications/77958573548

U2 - 10.1088/0957-4484/21/43/435301

DO - 10.1088/0957-4484/21/43/435301

M3 - Article

AN - SCOPUS:77958573548

SN - 0957-4484

VL - 21

JO - Nanotechnology

JF - Nanotechnology

IS - 43

M1 - 435301

ER -

CMOS compatible strategy based on selective atomic layer deposition of a hard mask for transferring block copolymer lithography patterns

Abstract

ASJC Scopus subject areas

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